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  stm-0 Datasheet PDF File

For stm-0 Found Datasheets File :: 3706    Search Time::2.969ms    
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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...0.085 OHM N-Channel Enhancement-Mode Silicon Gate TM D New Features of TMOS V * On-resis...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...0.12 OHM TM D New Features of TMOS V * On-resistance Area Product about One-half that of St...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...0.25 OHM (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless other...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...0.120 OHM TM D New Features of TMOS V * On-resistance Area Product about One-half that of S...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an adv...0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM (R) D CASE 221A-06, Style 5 TO-220AB MAXIMUM RATIN...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...0.18 OHM TM D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless oth...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text sTM Data Sheet TMOS VTM Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about...0.15 OHM TM D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless other...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...0.050 OHM TM D New Features of TMOS V * On-resistance Area Product about One-half that of S...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text sTM Data Sheet TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on-resistance area product about o...0.080 OHM TM D New Features of TMOS V * On-resistance Area Product about One-half that of S...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text sTM Data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed...0.028 OHM (R) D G S CASE 221A-06, Style 5 TO-220AB MAXIMUM RATINGS (TC = 25C unless o...
Description TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

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For stm-0 Found Datasheets File :: 3706    Search Time::2.969ms    
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