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For square single-turn Found Datasheets File :: 7360 Search Time::1.64ms
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				Vishay Intertechnology, Inc. Vishay Siliconix
Part No.	SI9433DY
OCR Text	... Surface Mounted 10 30 square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70125 S-00652--Rev. J, 27-Mar-00
Description	P-Channel 20-V (D-S) MOSFET, Low-Threshold P通道20 - V（下局副局长）MOSFET的低阈
File Size	56.36K / 4 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI9434DY
OCR Text	...3 10-2 10-1 1 10 30 square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981--Rev. H, 15-Jun-98 Siliconix was former...
Description	P-Channel Enhancement-Mode MOSFET
File Size	42.80K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	SI9435BDY SI9435BDY-T1
OCR Text	...ulse 0.01 10-4 10-3 10-2 10-1 1 square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/...Single Pulse 0.01 10-4 10-3 10-2 10-1 square Wave Pulse Duration (sec) 1 10 Document Number: 7224...
Description	P-Channel 30-V (D-S) MOSFET
File Size	65.35K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor VISAY[Vishay Siliconix]
Part No.	SI9436DY
OCR Text	...ulse 0.01 10-4 10-3 10-2 10-1 1 square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Norm...Single Pulse 0.01 10-4 10-3 10-2 10-1 square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 ...
Description	N-Channel 30-V (D-S) MOSFET
File Size	48.13K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSD2025 SSD2025TF
OCR Text	... 10- 2 - 4 10 101 t1 , square Wave Pulse Duration [sec] TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of...
Description	Dual N-CHANNEL POWER MOSFET 60V N-Channel Dual Power MOSFET
File Size	180.83K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FAN1581
OCR Text	.... *With package soldered to 0.5 square inch copper area over backside ground plane or internal power plane, JA can vary from 30 C/W to more ...single supply device with the control and power inputs tied together. In this mode, the dropout is d...
Description	5A Adjustable/Fixed Ultra Low Dropout Linear Regulator
File Size	512.71K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN1582 FAN1582D FAN1582D-1.5 FAN1582D15X FAN1582D-2.5 FAN1582D25X FAN1582DX FAN1582M FAN1582M-1.5 FAN1582M15X FAN1582M-2.5 FAN1582M25X FAN1582MX FAN1582P FAN1582P-1.5 FAN1582P15X FAN1582P-2.5 FAN1582P25X FAN1582PX
OCR Text	... *With package soldered to 0.5 square inch copper area over backside ground plane or internal power plane, JA can vary from 30 C/W to more ...single supply device with the control and power inputs tied together. In this mode, the dropout is d...
Description	3A Adjustable/Fixed Ultra Low Dropout Linear Regulator
File Size	390.40K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7380
OCR Text	...cle 2%. When mounted on 1 inch square copper board. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ISD 2.2A, di/dt 220A/s, VDD V(BR)DSS,TJ 150C. Data and specificat...
Description	80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package High frequency DC-DC converters
File Size	503.95K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	...rint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 1/19/00 IRFL014N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(t...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLL110 IRLL110TR
OCR Text	... C/W ** When mounted on 1'' square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 1/27/99 IRLL110 Electrical Characteristics @ TJ = 25C (unless...
Description	1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
File Size	213.54K / 8 Page	View it Online	Download Datasheet

For square single-turn Found Datasheets File :: 7360 Search Time::1.64ms
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