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  space-charge Datasheet PDF File

For space-charge Found Datasheets File :: 7910    Search Time::2.828ms    
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    FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
OCR Text ...ned for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture ...Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage...
Description 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 45.44K  /  8 Page

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    FSF055D3 FSF055R FSF055R3 FSF055R4 FSF055D FSF055D1 FSF055R1

HARRIS SEMICONDUCTOR
Intersil Corporation
Part No. FSF055D3 FSF055R FSF055R3 FSF055R4 FSF055D FSF055D1 FSF055R1
OCR Text ...ned for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture ...Charge Gate Charge at 12V Threshold Gate Charge Gate Charge Source Gate Charge Drain Plateau Voltage...
Description 25A/ 60V/ 0.020 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
25A, 60V, 0.020 OHM, RAD HARD, SEGR RESISTANT, N-CHANNEL POWER MOSFETS

File Size 45.97K  /  8 Page

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    Murata Electronics
Part No. GJ231X
OCR Text ...cifications because there is no space for detailed specifications. Therefore, or to transact the approval sheet for product specificaion bef...charge/discharge current is less than 50mA. The insulation resistance shall be measured with a DC vo...
Description (GJ2xx) Chip Monolithic Ceramic Capacitors

File Size 147.71K  /  6 Page

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    FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 FSPL230R FSPL230R3
OCR Text ...ons in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capabi...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

File Size 80.46K  /  8 Page

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    FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 FSPYC260F3 FSPYC260R FSPYC260R3
OCR Text ...ons in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capabi...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 82.56K  /  8 Page

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    FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3
OCR Text ...ons in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capabi...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 82.63K  /  8 Page

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    1N6492-DA-JQRS 1N6492-DC

Seme LAB
Part No. 1N6492-DA-JQRS 1N6492-DC
OCR Text ...A,1N6492-DC SCREENING OPTIONS Space Level (JQRS/ESA) and High Reliability options are available in accordance with the High Reliability an...charge Group B destructive mechanical samples Group C charge Group C destructive electrical samples ...
Description DUAL SCHOTTKY RECTIFIER

File Size 95.83K  /  3 Page

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    FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3
OCR Text ...ons in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capabi...
Description From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)

File Size 78.32K  /  8 Page

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    TOSHIBA
Part No. TC83220-0006
OCR Text ... 1606.8 + 1606.8 1 line space +tax 1606.8 1560 1560. shift 1560. shift 1560. +tax 1560. 46.8 ? tax charge. % 1606.8 + 1606.8 1 line space 1560 1560. 1560. 1560. 78900 78900. ...
Description Single-Chip CMOS LSI for FL (fluorescent) Calculator

File Size 226.58K  /  18 Page

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