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For row- Found Datasheets File :: 28192    Search Time::3.141ms    
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Part No. TC59SM808CMBL-80
OCR Text ...input/output cs chip select ras row address strobe cas column address strobe we write enable dqm (tc59sm808/m804) udqm/ldqm (tc59sm816) output disable/write mask clk clock input cke clock enable v cc power ( + 3.3 v) v ss ground v ccq power...
Description 32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60

File Size 2,246.80K  /  50 Page

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    Sanyo Electric Co.,Ltd.
Part No. LC863316
OCR Text ...line number can be set for each row independently (rows can be overlapped) - horizontal display start position can be set for each row independently - horizontal pitch (bit 9 - 16) *1 and vertical pitch (bit-32) can be set for each row i...
Description 8-Bit Single Chip Microcontroller

File Size 654.14K  /  20 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5DU561622ELTP-JI
OCR Text ...1622e(l)tp-xi pin configuration row and column address table items 32mx8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a1...
Description 16M X 16 DDR DRAM, 0.7 ns, PDSO66

File Size 235.26K  /  29 Page

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    ICM107 ICM-107BPA ICM107B

ETC[ETC]
Part No. ICM107 ICM-107BPA ICM107B
OCR Text ...t the beginning of the cycle, a row of pixels is pre-charged to its maximum value. Then the row is exposed to light for several lines worth of time and sampled by the ADC. A "Correlated Double Sampling (CDS)" process is performed with subtr...
Description ICM107B Mega pixel Color CMOS image sensor

File Size 514.81K  /  20 Page

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Part No. HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-70 HY5118164CSLJC-60 HY5116164CTC-70 HY5116164CSLJC-70
OCR Text ... gate memory array 4,194,304x16 row decoder ras clock generator substrate bias generator v cc v ss address buffer ras dq0 ~ dq15 *( a10) and *(a11) for 4k refresh part (1 k refresh / 4k refresh)* (10/8)* (10/12)* 8 8 8 8 8 8 8 8 a0 a1 ...
Description x16 EDO Page Mode DRAM

File Size 111.41K  /  8 Page

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    Mosel Vitelic Corp
Part No. V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2256164SXT75 V58C2256164SXT8 V58C2256804SXT8 V58C2256404SXT8
OCR Text ...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd powe...
Description HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM

File Size 800.32K  /  61 Page

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    VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
Part No. VG26V17400DJ-5
OCR Text ...ction a0 - a10 address inputs - row address a0 - a10 - column address a0 - a10 - refresh address a0 - a10 dq1 ~ dq4 data - in/data - out ras row address strobe cas column address strobe we write enable oe ...
Description 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24

File Size 254.84K  /  25 Page

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    PROMOS TECHNOLOGIES INC
Part No. V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5
OCR Text ...clock enable cs chip select ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba 0 , ba 1 bank select dq?s data input/output dm (udm, ldm) data mask v dd p...
Description 32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66

File Size 923.94K  /  61 Page

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