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  rg-62 u Datasheet PDF File

For rg-62 u Found Datasheets File :: 3367    Search Time::1.297ms    
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    CM200RX-12A

Mitsubishi Electric Semiconductor
Part No. CM200RX-12A
OCR Text ...CC = 300V, IC = 200A VGE = 15V, RG = 5.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 200A) IE = 200A, VGE = 0V (Note...62 unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC ...
Description IGBT MODuLES HIGH POWER SWITCHING uSE

File Size 223.57K  /  8 Page

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    FQP33N10

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP33N10
OCR Text ...4, 5) VDD = 50 V, ID = 33 A, RG = 25 (Note 4, 5) -------- 15 195 80 110 38 7.5 18 40 400 170 230 51 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description 100V N-Channel MOSFET

File Size 572.96K  /  8 Page

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    19N10L-TQ2-R 19N10L-TQ2-T 19N10G-TN3-R 19N10L-T3P-T 19N10L-TA3-T 19N10L-TN3-R 19N10G-TA3-T 19N10G-TQ2-R 19N10G-TQ2-T 19N

UNISONIC TECHNOLOGIES CO LTD
Part No. 19N10L-TQ2-R 19N10L-TQ2-T 19N10G-TN3-R 19N10L-T3P-T 19N10L-TA3-T 19N10L-TN3-R 19N10G-TA3-T 19N10G-TQ2-R 19N10G-TQ2-T 19N1009 19N10L-TM3-T
OCR Text .... L=1.35mH, IAS=15.6A, VDD=25V, RG=25 , Starting TJ=25C 4. ISD19A, di/dt 300A/s, VDDBVDSS, Starting TJ=25C THERMAL DATA PARAMETER TO-25...62.5 40 2.5 2.0 0.7 uNIT C/W C/W C/W C/W C/W C/W JC ELECTRICAL CHARACTERISTICS (TJ=25C, unless...
Description 100V N-Channel MOSFET
15.6 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 226.28K  /  6 Page

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    CM50MX-24A

Mitsubishi Electric Semiconductor
Part No. CM50MX-24A
OCR Text ...VCC = 600V, IC = 50A VGE = 15V, RG = 6.2 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 50A) IE = 50A, VGE = 0V (Note. ...62 unit mA V A V nF nC ns C V K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) C...
Description IGBT MODuLES HIGH POWER SWITCHING uSE

File Size 212.45K  /  8 Page

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    IRL1104L 2225 IRL1104S

International Rectifier
Part No. IRL1104L 2225 IRL1104S
OCR Text ... --- VDD = 20V --- ID =54A --- RG = 3.6 , VGS = 4.5V --- RD = 0.4, See Fig. 10 Between lead, 7.5 nH --- and center of die contact 3445 ---...62 A VDS = 32V VDS = 20V 8 C, Capacitance (pF) 4000 Ciss 6 3000 4 2000 Co...
Description Advanced Process Technology Logic-Level Gate Drive
From old datasheet system
HEXFET? Power MOSFET

File Size 188.62K  /  10 Page

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    IRLB8721PBF IRLB8721PBF-15

International Rectifier
Part No. IRLB8721PBF IRLB8721PBF-15
OCR Text ...Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient...62 A 250 1.0 24 21 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction di...
Description HEXFET Power MOSFET
Optimized for uPS/Inverter Applications

File Size 265.16K  /  9 Page

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    CM100MX-12A

Mitsubishi Electric Semiconductor
Part No. CM100MX-12A
OCR Text ...CC = 300V, IC = 100A VGE = 15V, RG = 6.2 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 100A) IE = 100A, VGE = 0V (Note...62 unit mA V A V nF nC ns C V K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) C...
Description IGBT MODuLES HIGH POWER SWITCHING uSE

File Size 215.32K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- RD = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS =...62 units C/W 62 Diode Characteristics IS I SM VSD t rr Q rr ton Parameter Continuous ...
Description 400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    2N60L-X-TA3-T 2N60L-X-TM3-T 2N60L-X-TMA-T 2N60G-X-TM3-T 2N60G-X-T2Q-T 2N60G-X-T60-K 2N60G-X-TA3-T 2N60L-X-T2Q-T 2N60L-X-

Unisonic Technologies
Part No. 2N60L-X-TA3-T 2N60L-X-TM3-T 2N60L-X-TMA-T 2N60G-X-TM3-T 2N60G-X-T2Q-T 2N60G-X-T60-K 2N60G-X-TA3-T 2N60L-X-T2Q-T 2N60L-X-T60-K 2N60L-X-TF1-T 2N60G-X-TF1-T 2N60L-X-TN3-R 2N60G-X-TF3-T 2N60L-X-TF3-T
OCR Text ...J 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD2.4A, di/dt200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PACKAGE TO...62.5 62.5 100 62.5 89 2.32 5.5 2.87 2.32 3.12 uNIT /W /W /W /W /W /W /W /W /W /W JA Jc uNIS...
Description 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

File Size 217.64K  /  6 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- R D = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS ...62 units C/W 62 Diode Characteristics Min. Typ. Max. units IS I SM VSD t rr Q rr ton ...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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