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Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280W Q62702-F1504
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| OCR Text |
...Code Pin Configuration BFP 280W REs Q62702-F1504 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage C...fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
89.88... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
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| File Size |
59.70K /
7 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BFP280 Q62702-F1378
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| OCR Text |
... Code Pin Configuration BFP 280 REs Q62702-F1378 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage C...fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
89.88... |
| Description |
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN硅射频晶体管(对于低噪音,在移动通信系统的低功耗放大器 NPN Silicon RF Transistor (For low noise low-power amplifiers in mobile communication systems) From old datasheet system
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| File Size |
60.12K /
7 Page |
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it Online |
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Infineon
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| Part No. |
BFP640
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| OCR Text |
....4 ff rbs = 1200 ? rcs = 1200 ? res = 300 ? for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http//www.infineon... |
| Description |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
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| File Size |
271.06K /
8 Page |
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it Online |
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Vishay Intertechnology, Inc. International Rectifier
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| Part No. |
IRG4PC30 IRG4PC30F IRG4PC30F-EPBF IRG4PC30FPBF
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| OCR Text |
...00
8
C oes
400
4
C res
0 1 10
A
100
0 0 10 20 30 40 50
A
60
V C E , Collector-to-Emitter Voltage (V)
Q g , To...ff)
Fig. 14b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o f... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 31 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
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| File Size |
143.46K /
8 Page |
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it Online |
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Price and Availability
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