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RFMD[RF Micro Devices]
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| Part No. |
RF2436
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| OCR Text |
...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS
Features
* Single Positive Power Supply * Low Current Consumption * 0.5dB Inserti... |
| Description |
TRANSMIT/RECEIVE SWITCH
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| File Size |
41.37K /
6 Page |
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RFMD[RF Micro Devices]
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| Part No. |
RF2436_06 RF2436 RF2436PCBA
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| OCR Text |
...T switch. The device can handle power levels as high as +28dBm and spans a frequency range from DC to 2500MHz. The switch will operate from ...MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT-5
Features * Single Positive Power Supply * Low... |
| Description |
TRANSMIT/RECEIVE SWITCH
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| File Size |
62.06K /
6 Page |
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it Online |
Download Datasheet |
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RFMD[RF Micro Devices]
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| Part No. |
RF2304_06 RF2304 RF2304PCBA-41X RF230406
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| OCR Text |
...above 2.5GHz. With +6dBm output power, it may also be used as a driver in transmitter applications, or in highly linear receivers. The devic...MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOIC-8
Features * Single 2.7V to 6.0V Supply * 6dBm... |
| Description |
GENERAL PURPOSE LOW-NOISE AMPLIFIER
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| File Size |
237.95K /
10 Page |
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it Online |
Download Datasheet |
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CEL
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| Part No. |
NE67483B
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| OCR Text |
...12 ghz db 8.5 10.0 p 1db output power at 1 db gain compression point, f = 12 ghz, v ds = 3 v, i ds = 30 ma dbm 14.5 i dss saturated drain current at v ds = 3 v, v gs = 0 v ma 20 40 120 v gs(off) gate to source cut off voltage at v ds =... |
| Description |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
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| File Size |
134.57K /
7 Page |
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it Online |
Download Datasheet |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NE721S01-T1B NE721S01 NE721S01-T1
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| OCR Text |
POWER GAIN: 7 dB TYP at 12 GHz * HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz * LG = 0.8 m, WG = 330 m * LOW PHASE NOISE: -110 dBc/Hz TYP at 100 ...MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this devi... |
| Description |
GENERAL PURPOSE L TO X-BAND GaAs MESFET 一般目L至X波段GaAs MESFET器件
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| File Size |
32.61K /
5 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NE72118-T2 NE72118 NE72118-T1
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| OCR Text |
POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 m (recessed gate) GATE WIDTH: Wg = 330 m 4 PINS SUPER MINI MOLD
0.3 -0.05
...MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This device's low phase ... |
| Description |
C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET
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| File Size |
42.67K /
4 Page |
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it Online |
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Price and Availability
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