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SGM8291 FA7530 K1500 BU921 ULN2003L MM3032E 05201 55140
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    Vishay Semiconductors
Part No. BPW97
OCR Text ...ms with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which a...
Description Photo Diode, PIN PHOTO DIODE, HERMETIC SEALED, TO-18, 3 PIN

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    2SB1172 2SB1172A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1172 2SB1172A
OCR Text ...ltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P ...
Description Silicon PNP epitaxial planar type

File Size 75.67K  /  3 Page

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    2SB1175

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1175
OCR Text ...ltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -1 A IC = -3 A, IB = - 0.15 A I...
Description Silicon PNP epitaxial planar type

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    2SB1176

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1176
OCR Text ...ltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -2 A IC = -4 A, IB = - 0.2 A IC...
Description Silicon PNP epitaxial planar type

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    2SB1180 2SB1180A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1180 2SB1180A
OCR Text ...ltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VEB = -7 V, IC = 0 VCE = -3 V, IC = -4 A VCE = -3 V, IC = -8 A IC = -4 A, IB = -8 mA IC = -4 A, IB ...
Description Silicon PNP epitaxial planar type darlington

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    TSM4539D

Taiwan Semiconductor Company, Ltd
Part No. TSM4539D
OCR Text ...ct summary v ds (v) r ds(on) (m ? ) i d (a) n-channel 30 28 @ v gs = 10v 6.5 42 @ v gs = 4.5v 5.0 p-channel -30...time n-channel v dd =15v, i d = 1a, v gen =10v, r g = 6 ? t d(on) n-ch -- 7 -- ns ...
Description Complementary Enhancement MOSFET

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    NLPG01S02-E

NICHIA CORPORATION
Part No. NLPG01S02-E
OCR Text ...acteristics ? and ?directivity? on the following pages. nichia sts-da1-0559 <cat.no.081105> -2- 5. product construction ...time (s) relative forward voltage vf (v) -0.003 -0.002 -0.001 0 0.001 0.002 0.003 0 100 200 300 ti...
Description SPECIFICATIONS FOR NICHIA LUMINOUS INTENSITY GREEN STANDARD LED

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Part No. JANSG2N7469U2
OCR Text ...). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and...time ? ? 300 ns t j = 25c, i f = 45a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.2 cv d...
Description 75 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 127.64K  /  8 Page

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