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  ms-026 Datasheet PDF File

For ms-026 Found Datasheets File :: 2501    Search Time::1.672ms    
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HITACHI[Hitachi Semiconductor]
Part No. 2SC4196
OCR Text ...0 500 600 700 800 900 1000 Yie (mS) REAL 3.035 6.463 10.768 15.089 18.776 22.098 24.568 26.291 28.112 29.685 IMAG. 5.491 10.003 12.356 13.18...026 0.128 0.216 0.320 0.316 0.378 0.424 0.469 0.563 0.650 IMAG. 0.591 1.254 1.797 2.394 2.917 3.544 ...
Description Silicon NPN Epitaxial

File Size 51.12K  /  10 Page

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    VISAY[Vishay Siliconix]
Part No. SUM40N02-12P
OCR Text ...RM Qrr IF = 40 A, di/dt = 100 A/ms m IF = 40 A, VGS = 0 V 1.1 20 0.7 0.007 40 90 1.5 40 1.1 0.022 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, n...
Description N-Channel 20-V (D-S) 175C MOSFET

File Size 55.97K  /  5 Page

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    SQJ456EP-T1-GE3

Vishay Siliconix
Part No. SQJ456EP-T1-GE3
OCR Text ... u lse 100 s b v dss limited 1 ms 10 ms 100 ms, 1 s, 10 s, dc limited by r * ds(on) i d limited i dm limited 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse dur...
Description Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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    VISHAY INTERTECHNOLOGY INC
Part No. ST173C12CFP2LP VISHAYINTERTECHNOLOGYINC-ST173C10CFP1LP
OCR Text ...tive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 4680 t = 8.3 ms 4900 t = 10 ms 10...026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 www.vishay.com for technical que...
Description 610 A, 1200 V, SCR, TO-200AB

File Size 126.55K  /  9 Page

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    NSS12601CF8T1G NSS12601CF8

Rectron Semiconductor
Part No. NSS12601CF8T1G NSS12601CF8
OCR Text ...1 10 0.01 1 10 100 i c (a) 1.0 ms 10 ms 100 ms 1.0 s thermal limit 0.1 single pulse test at t amb = 25 c nss12601cf8t1g http://onsemi.c...026 mm inches basic style 2.362 0.093 1 8x 8x 2.032 0.08 1.727 0.068 0.66 0.026 2.362 0.093 mm...
Description Low V-CE(sat) Transistor, NPN, 12 V, 8.0 A
12 V, 8.0 A, Low V<sub>CE(sat)</sub> NPN Transistor 6000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
12 V, 8.0 A, Low VCE(sat) NPN Transistor

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. MCC56-14IO1 MCD56-18IO8B MCC56 MCC56-08IO1B MCC56-08IO8B MCC56-12IO1B MCC56-12IO8B MCC56-14IO1B MCC56-14IO8B MCC56-16IO1 MCC56-16IO1B MCC56-16IO8B MCC56-18IO1B MCC56-18IO8B MCD56-08IO1B MCD56-08IO8B MCD56-12IO1B MCD56-12IO8B MCD56-14IO8B MCD56-16IO1B MCD56-16IO8B MDC56-06IO1B
OCR Text ...VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz)...026 0.41 ti (s) 0.015 0.0095 0.175 Fig. 9 Transient thermal impedance junction to heatsink (per t...
Description Thyristor Modules Thyristor/Diode Modules 100 A, 1400 V, SCR, TO-240AA

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    NTHS4501NT1G NTHS4501NT1

ON Semiconductor
Part No. NTHS4501NT1G NTHS4501NT1
OCR Text ...M AND PIN ASSIGNMENT tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering ...026 2X 2X mm inches 0.457 0.018 0.66 0.026 mm inches Basic *For additional informati...
Description Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package

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    ABB[The ABB Group]
Part No. 5SDD71B0200
OCR Text ... 50 mA Half sine wave, tP = 10 ms, f = 50 Hz Half sine wave, tP = 10 ms Tj = 170 C VR = VRRM Mechanical FM a Mounting force min. max. A...026 m IF = Approximation for Tj = 170 C IF = 5 - 15 kA Thermal characteristics Tj Tstg Rth...
Description Rectifier Diode

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    TSDF12830YS

VISAY[Vishay Siliconix]
Part No. TSDF12830YS
OCR Text ...l forward transadmittance of 31 mS resp. 28 mS * Superior cross modulation at gain reduction * High AGC-range with soft slope * Main AGC con...026) 1.3 (0.052) 0.65 (0.026) Ref. 0.90 (0.035) 1.30 (0.052) Ref. 14280 www.vishay.co...
Description Transistors, RF & AF
Dual - MOSMIC two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching

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    VISAY[Vishay Siliconix]
Part No. SI6880EDQ
OCR Text ..._C)a _ Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction ...026 S V W 0.45 "250 "10 1 25 V nA mA mA m A Symbol Test Conditions Min Typ Max Uni...
Description N-Channel 1.8-V (G-S) Battery Switch, ESD Protection

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For ms-026 Found Datasheets File :: 2501    Search Time::1.672ms    
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