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For mobility Found Datasheets File :: 592 Search Time::4.344ms
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				Filtronic Compound Semiconductors
Part No.	FPD750DFN
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optim...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
File Size	160.11K / 5 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD750SOT89
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optim...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
File Size	383.54K / 8 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD750
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimi...
Description	0.5W POWER PHEMT
File Size	172.52K / 2 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE425S01 NE425S01-T1 NE425S01-T1B
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 0.2 FEATURES * Super Low Noise Figure &...
Description	C TO KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	55.97K / 12 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD750SOT343
OCR Text	...aAs pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optim...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
File Size	99.94K / 4 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MA4E2037 MA4E2040 MA4E2039
OCR Text	...ow parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with s...
Description	GAAS BEAM LEAD SCHOTTKY BARRIER DIODES
File Size	38.37K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	MGA-725M4 MGA725M4 MGA-725M4-BLK MGA-725M4-TR1 MGA-725M4-TR2 DEMO-MGA-725M4
OCR Text	...MT (Pseudomorphic High Electron mobility Transistor). It is housed in the MiniPak 1412 package. It is part of the Agilent Technologies CDMAdvantage RF chipset. Ax Pin Connections and Package Marking GROUND OUTPUT Control Input & Vre...
Description	MGA-725M4 · 3V LNA with Bypass Switch, 2 to 14dBm Adjustable IIP3, MiniPak Package DEMO-MGA-725M4 · Demonstration circuit board for MGA-725M4 (2 GHz) Low Noise Amplifier with Bypass Switch In Miniature Leadless Package
File Size	178.99K / 20 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FMA3019QFN FMA3019QFN-EB
OCR Text	... of pseudomorphic High Electron mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows...
Description	HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE
File Size	96.77K / 4 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP750SOT89-2 LP750SOT89-1 LP750SOT89
OCR Text	...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resi...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT LOW NOISE HIGH LINEARITY PACKAGED PHEMT LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
File Size	43.41K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4931AM
OCR Text	...r-low noise HEMT (High Electron mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	48.11K / 5 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::4.344ms
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