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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
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| OCR Text |
... SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA -
Values typ. 0.68 max. 1 62 40
Uni...10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 1K/W t... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
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| File Size |
415.22K /
8 Page |
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it Online |
Download Datasheet
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Analog Devices, Inc.
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| Part No. |
AD7641BCPZRL EVAL-AD7641CB AD7641BSTZ AD7641BSTZRL AD7631 AD7634
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| OCR Text |
...ef = 5 v; all specifications t min to t max , unless otherwise noted. table 2. parameter conditions min typ max unit resolution ...10v v in+ - v in? -2v ref 2v ref 5v v in+ - v in? -2v ref 2v ref 10v v in+ - v in? -4v... |
| Description |
18-Bit 250/670 kSPS PulSAR Bipolar Programmable Inputs ADC 18位六百七十○分之二百五十○kSPSPulSAR系列双极性输入ADC的可编程
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| File Size |
182.11K /
14 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation
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| Part No. |
6N136F
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| OCR Text |
... isolation voltage: 2500v rms (min.) ? high speed: t phl , t plh = 0.5 s (typ.) (r l = 1.9k ? ) ? ttl compatible ? if base pin is ...10v p? p r l = 4.1k ? D 1000 D v / s common mode transient immunity at logic high level o... |
| Description |
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| File Size |
164.29K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
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| OCR Text |
... SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.35 max. 0.5 62 6...10V, I D=80A
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= ... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/262/263; 80A; 40V; NL; 4mOhm
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| File Size |
415.24K /
8 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-05 SPB80N06S2-05
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| OCR Text |
... SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62...10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; NL; 5.1 mOhm
OptiMOS Power-Transistor
2.00mm Pitch DIL Female Crimp Housing, 10 10-way
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| File Size |
307.00K /
8 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-08 SPB80N06S2-08 SPI80N06S2-08
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| OCR Text |
... SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.46 max. 0.7 62 6...10V, I D=58A
1Current limited by bondwire ; with an RthJC = 0.7K/W the chip is able to carry ID= ... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; NL; 8 mOhm
OptiMOS Power-Transistor
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| File Size |
419.44K /
8 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2-09 SPB80N06S2-09
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| OCR Text |
... SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.52 max. 0.8 62 6...10V, I D=50A
1Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= ... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor
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| File Size |
315.81K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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