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NXP
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| Part No. |
PMEG6045ETP
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| OCR Text |
... - 70 300 ma v r = 1 v; f = 1 mhz; t j = 25 c - 575 - pf c d diode capacitance v r = 10 v; f = 1 mhz; t j = 25 c - 200 - pf t rr rever...175 c (2) t j = 150 c (3) t j = 125 c (4) t j = 85 c (5) t j = 25 c (6) t j = ?40 c fig. 4. for... |
| Description |
Schottky barrier rectifier
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| File Size |
231.20K /
14 Page |
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it Online |
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Freescale Semiconductor Inc (Motorola)
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| Part No. |
MRF1513T1
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| OCR Text |
...cations with frequencies to 520 mhz. The high gain and broadband performance of this device make it ideal for large-signal, common source am...175 mhz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 - 175 mhz
5 Pout , OUTPUT POWER (WAT... |
| Description |
TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,2A I(D),PLD
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| File Size |
718.52K /
16 Page |
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it Online |
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ICST
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| Part No. |
ICS557-06
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| OCR Text |
...differential clock of up to 200 mhz for HCSL and up to 100 mhz for LVDS
* Jitter 100 ps (peak-to-peak) * Output-to-output skew of 50 ps
...175 V
500 ps
500 ps
tOF 0.52 V 0.175 V
MDS 557-06 C In te grated Circuit Systems
5
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| Description |
ONE TO FOUR HCSL CLOCK BUFFER
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| File Size |
214.93K /
10 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D1003UK
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| OCR Text |
...
* HF/VHF COMMUNICATIONS from 1 mhz to 175 mhz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Curren... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175mhz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175mhz,单端))
METAL GATE RF SILICON FET
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| File Size |
39.42K /
4 Page |
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it Online |
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ICST
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| Part No. |
ICS557-08
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| OCR Text |
...ut clock frequency of up to 200 mhz for HCSL and up to 100 mhz for LVDS
* Jitter 60 ps (cycle-to-cycle)
Block Diagram
VDD 3
OE
...175 V
0.525 V 0.175 V
MDS 557-08 C In te grated Circuit Systems
5
525 Ra ce Street, San ... |
| Description |
2:1 MULTIPLEXER CHIP
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| File Size |
203.92K /
11 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IDW30G120C5B
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| OCR Text |
...pacitance c v r =1 v, f =1 mhz v r =400 v, f =1 mhz v r =800 v, f =1 mhz - - - 990 / 1 980 70 / 140 55 / 11...175 p [w] t c [ c] 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175 i f [a] t c [ c] d= 0.1... |
| Description |
Revolutionary semiconductor material - Silicon Carbide
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| File Size |
563.10K /
10 Page |
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it Online |
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Price and Availability
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