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    MGP20N60U

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MGP20N60U
OCR Text ...= 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 25 C) 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff td(on) tr td(off) tf Eoff QT Q1 Q2 -- -...
Description Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 116.62K  /  6 Page

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    MGW20N60D

MOTOROLA INC
MOTOROLA[Motorola, Inc]
Part No. MGW20N60D
OCR Text ... mH RG = 20 , TJ = 125C) Energy losses include "tail" (VCC = 360 Vdc, IC = 20 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 , TJ = 25C) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode

File Size 245.88K  /  6 Page

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    RJU3051SDPE-00J3

Renesas Electronics Corporation
Part No. RJU3051SDPE-00J3
OCR Text ...umes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this docume...
Description 360V - 10A - Single Diode Ultra Fast Recovery Diode

File Size 96.11K  /  4 Page

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    NV4V41SF

Renesas Electronics Corporation
Part No. NV4V41SF
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this docume...
Description Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source

File Size 266.02K  /  9 Page

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    IRF6893MPBF IRF6893MTRPBF IRF6893MPBF-15

International Rectifier
Part No. IRF6893MPBF IRF6893MTRPBF IRF6893MPBF-15
OCR Text ...e both conduction and switching losses. this part contains an integrated schottky diode to reduce the qrr of the body drain diode furt her reducing the losses in a synchronous buck circuit. the reduced losses make this product ideal for hig...
Description DirectFET? MOSFET with Schottky Diode
   RoHs Compliant Containing No Lead and Bromide

File Size 227.29K  /  9 Page

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    Renesas Electronics
Part No. 78F0525 78F0525A 78F0523 78F0523A
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with t...
Description 8-Bit Single-Chip Microcontrollers

File Size 1,168.66K  /  191 Page

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    RJK6025DPH-E0 RJK6025DPH-E0T2

Renesas Electronics Corporation
Part No. RJK6025DPH-E0 RJK6025DPH-E0T2
OCR Text ...umes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this docume...
Description 600V - 1A - MOS FET High Speed Power Switching

File Size 94.78K  /  7 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ... = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 18 15 207 13 0.39 0.30 0.69 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characte...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12

Renesas Electronics Corporation
Part No. RJK6025DPE RJK6025DPE-00J3 RJK6025DPE12
OCR Text ...sumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this docume...
Description 600V - 0.8A - MOS FET High Speed Power Switching

File Size 71.76K  /  7 Page

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    NVD4808NT4G NTD4808NT4G

ON Semiconductor
Part No. NVD4808NT4G NTD4808NT4G
OCR Text ... ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? nvd prefix for automotive and other applications requiring unique site and control change requirements...
Description Power MOSFET 30 V, 63 A, Single N?Channel, DPAK/IPAK

File Size 149.75K  /  8 Page

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