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NIC Components, Corp.
Electronic Theatre Controls, Inc.
BCD Semiconductor Manufacturing, Ltd.
Omron Electronics, LLC
NXP Semiconductors N.V.
Ecliptek, Corp.
ITT, Corp.
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| Part No. |
PFLDL-TTL5-7J PFLDL-TTL5-4F PFLDL-TTL5-6G PFLDL-TTL5-25G PFLDL-TTL5-25F PFLDL-TTL5-12G PFLDL-TTL5-12J PFLDL-TTL5-10F PFLDL-TTL5-10T PFLDL-TTL5-12F PFLDL-TTL5-12T PFLDL-TTL5-3F PFLDL-TTL5-20T PFLDL-TTL5-3J PFLDL-TTL5-30F PFLDL-TTL5-30T PFLDL-TTL5-10J PFLDL-TTL5-35J PFLDL-TTL5-3G PFLDL-TTL5-35G PFLDL-TTL5-40F PFLDL-TTL5-40T PFLDL-TTL5-3T PFLDL-TTL5-5F PFLDL-TTL5-45J PFLDL-TTL5-45T PFLDL-TTL5-5J PFLDL-TTL5-10G PFLDL-TTL5-4G PFLDL-TTL5-6J PFLDL-TTL5-4J PFLDL-TTL5-50F PFLDL-TTL5-40J PFLDL-TTL5-5G PFLDL-TTL5-50T PFLDL-TTL5-20F PFLDL-TTL5-30J PFLDL-TTL5-20J PFLDL-TTL5-40G PFLDL-TTL5-45G PFLDL-TTL5-35T PFLDL-TTL5-5T PFLDL-TTL5-6F PFLDL-TTL5-4T PFLDL-TTL5-6T PFLDL-TTL5-50G PFLDL-TTL5-20G PFLDL-TTL5-35F PFLDL-TTL5-45F PFLDL-TTL5-50J PFLDL-TTL5-30G PFLDL-TTL5-9J PFLDL-TTL5-7T PFLDL-TTL5-25T PFLDL-TTL5-2G PFLDL-TTL5-8T PFLDL-TTL5-13G PFLDL-TTL5-11T PFLDL-TTL5-11G PFLDL-TTL5-11F PFLDL-TTL5-11J PFLDL-TTL5-15T PFLDL-TTL5-1T PFLDL-TTL5-14F PFLDL-TTL5-13F PFLDL-TTL5-15F PFLDL-TTL5-14J
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| Description |
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection
4.5A, 500kHz Step-Down Switching Regulator
5mhz, 3V/us, Low Power Single Supply, Dual and Quad Precision Op Amps; Package: SO; No of Pins: 8; Temperature range: 0°C to 70°C
5mhz, 3V/us, Low Power Single Supply, Dual and Quad Precision Op Amps; Package: SO; No of Pins: 16; Temperature range: 0°C to 70°C
SEPIC Constant- or Programmable-Current/Constant-Voltage Battery Charger; Package: DD PAK; No of Pins: 7; Temperature range: 0°C to 70°C
Advanced Low Power 5V RS232 Transceiver with Small Capacitors; Package: SO; No of Pins: 28; Temperature range: 0°C to 70°C
3A Low Dropout Regulator for Microprocessor Applications; Package: to-220; No of Pins: 5; Temperature range: 0°C to 70°C
Ultralow Noise 2A Switching Regulator; Package: SO; No of Pins: 16; Temperature range: -40°C to 85°C
1.4nV/Rt.Hz 180mhz Filter Building Block; Package: MSOP; No of Pins: 8; Temperature range: 0°C to 70°C
Advanced Low Power 5V RS232 Transceiver with Small Capacitors; Package: SSOP; No of Pins: 28; Temperature range: 0°C to 70°C
Constant-Voltage/Constant-Current Battery Charger; Package: SO; No of Pins: 8; Temperature range: -40°C to 85°C
Very Low Noise, High frequency Active RC, Filter Building Block; Package: SSOP; No of Pins: 16; Temperature range: -40°C to 85°C
Ultralow Noise 2A Switching Regulator; Package: SO; No of Pins: 16; Temperature range: 0°C to 70°C
SEPIC Constant-Current/Constant-Voltage Battery Charger; Package: PDIP; No of Pins: 8; Temperature range: 0°C to 70°C
300mA Low Dropout Regulators with Micropower Quiescent Current and Shutdown; Package: SOT; No of Pins: 3; Temperature range: 0°C to 70°C
Constant-Voltage/Constant-Current Battery Charger; Package: SSOP; No of Pins: 16; Temperature range: 0°C to 70°C
Dual/Quad Over-The-top Micropower Rail-to-Rail input and Output Op Amps; Package: PDIP; No of Pins: 14; Temperature range: 0°C to 70°C
3A Low Dropout Regulator for Microprocessor Applications; Package: to-220; No of Pins: 5; Temperature range: 0°C to 70°C 逻辑IC
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULAtoRS 抗辐射高效，5安培开关稳压器
Very Low Noise, High frequency Active RC, Filter Building Block; Package: SSOP; No of Pins: 16; Temperature range: -40°C to 85°C 逻辑IC
Logic IC 逻辑IC
1.5uA Max, Single, Dual and Quad Precision Rail-to-Rail input and Output Op Amps; Package: SO; No of Pins: 8; Temperature range: -40°C to 85°C 逻辑IC
300mA Low Dropout Regulators with Micropower Quiescent Current and Shutdown; Package: SOT; No of Pins: 3; Temperature range: 0°C to 70°C 逻辑IC
Advanced Low Power 5V RS232 Transceiver with Small Capacitors; Package: SSOP; No of Pins: 28; Temperature range: 0°C to 70°C 逻辑IC
1.5uA Max, Single, Dual and Quad Precision Rail-to-Rail input and Output Op Amps; Package: MSOP; No of Pins: 8; Temperature range: 0°C to 70°C 逻辑IC
10mhz, 6V/us, Dual/Quad Rail-to-Rail input and Output Precision C-Load Op Amps; Package: SO; No of Pins: 8; Temperature range: 0°C to 70°C 逻辑IC
1.5uA Max, Single, Dual and Quad Precision Rail-to-Rail input and Output Op Amps; Package: SO; No of Pins: 14; Temperature range: 0°C to 70°C 逻辑IC
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| File Size |
364.01K /
3 Page |
 View
it Online |
Download Datasheet
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Vectron International, Inc.
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| Part No. |
FX-101
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| Description |
frequency Translator7.760 mhz Output Locked to input frequency 8kHz Clock频率变换器（77.760mhz时钟输出kHz输入时钟
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| File Size |
994.87K /
7 Page |
View
it Online |
Download Datasheet |
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| Part No. |
PM962A PM952A PM951B PM941B PM941A
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| Description |
No RSENSE, Low EMI, Synchronous DC/DC Controller with Output Tracking; Package: SSOP; No of Pins: 16; Temperature range: -40°C to 125°C
Constant frequency Current Mode Flyback DC/DC Controller in ThinSOT; Package: SOT; No of Pins: 6; Temperature range: -40°C to 125°C
Micropower Constant frequency Step-Down DC/DC Controllers in ThinSOT; Package: SOT; No of Pins: 6; Temperature range: -40°C to 125°C
Analog IC
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| File Size |
259.34K /
2 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
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| Part No. |
M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
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| Description |
256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 5; Operating range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; input range: 1 mhz to 166 mhz; Output range: 1 mhz to 200 mhz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (mhz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; frequency range: 0 mhz to 140 mhz; Outputs: 4; Operating range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 8; Operating range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating frequency: 3.75 mhz to 80 mhz; Outputs: 8; Operating range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-mhz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; frequency range: 0 mhz to 200 mhz; Outputs: 12; Operating range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 5; Operating range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 8; Operating range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (mhz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating frequency: 3.75 mhz to 80 mhz; Outputs: 8; Operating range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 9; Operating range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; input frequency: 100 mhz to 133 mhz; Output frequency: 300 mhz to 800 mhz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (mhz): 167; tPD (ns): 7
2.5V or 3.3V, 200-mhz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; frequency range: 0 mhz to 200 mhz; Outputs: 10; Operating range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (mhz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (mhz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating frequency: 3.75 mhz to 80 mhz; Outputs: 8; Operating range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; input frequency range: 25 mhz to 100 mhz; Output frequency range: 25 mhz to 100 mhz; Operating range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating frequency: 3.75 mhz to 80 mhz; Outputs: 8; Operating range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (mhz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (mhz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (mhz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (mhz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (mhz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; input range: 1 mhz to 30 mhz; Output range: .077 mhz to 100 mhz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating frequency: 3.75 mhz to 110 mhz; Outputs: 8; Operating range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; frequency range: 0 mhz to 100 mhz; Outputs: 10; Operating range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 9; Operating range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating frequency: 3.75 mhz to 80 mhz; Outputs: 8; Operating range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-mhz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; frequency range: 10 mhz to 200 mhz; Outputs: 12; Operating range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; input range: 10 mhz to 133 mhz; Output range: 20 mhz to 200 mhz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 5; Operating range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 5; Operating range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; input range: 1 mhz to 166 mhz; Output range: 0 mhz to 200 mhz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; frequency range: 0 mhz to 350 mhz; Outputs: 8; Operating range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; input range: 27 mhz to 27 mhz; Output range: 4.2 mhz to 166 mhz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-mhz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; frequency range: 0 mhz to 200 mhz; Outputs: 12; Operating range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; frequency range: 10 mhz to 133 mhz; Outputs: 9; Operating range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating frequency: 24 mhz to 200 mhz; Outputs: 11; Operating range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-mhz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; frequency range: 0 mhz to 200 mhz; Outputs: 18; Operating range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-mhz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; frequency range: 0 mhz to 200 mhz; Outputs: 12; Operating range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; frequency range: 0 mhz to 350 mhz; Outputs: 8; Operating range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; input frequency range: 4 mhz to 32 mhz; Output frequency range: 4 mhz to 32 mhz; Operating range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating frequency: 3.75 mhz to 110 mhz; Outputs: 8; Operating range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (mhz): 100; tPD (ns): 9
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