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MIC4574 MMBT404A DTA144E N83605M 6200T7LC 3296P502 SMB137B 81111
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  id-1.6a Datasheet PDF File

For id-1.6a Found Datasheets File :: 3744    Search Time::1.172ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...1) FQB6N40C/FQI6N40C 400 6 3.6 24 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ ...
Description 400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series

File Size 660.38K  /  9 Page

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    GSS4565

GTM CORPORATION
Part No. GSS4565
OCR Text ...BVDSS 40V N-CH RDS(ON) 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A Features Package Dimensions REF. A B C D E F...1.35 1.75 0.375 REF. 45 C 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 557.67K  /  7 Page

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    CEM3178

Chino-Excel Technology
Part No. CEM3178
OCR Text ... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C 20 7.6 30 2.0 -55 to 150 Maximum Power Dissipation Opera...1 Rev 1. 2006.April http://www.cetsemi.com CEM3178 Electrical Characteristics Parameter Off...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 101.08K  /  4 Page

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    CEM3172

Chino-Excel Technology
Part No. CEM3172
OCR Text ... otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C 20 8.9 30 2.5 -55 to 150 Maximum Power Dissipation Opera...1 Rev 1. 2006.April http://www.cetsemi.com CEM3172 Electrical Characteristics Parameter Off...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 101.29K  /  4 Page

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage ...1.6 0.02 20 30 70 5.0 -55 to + 150 Units V A W W/C V V mJ V/ns C Thermal Resistance Paramet...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ... VDSS = -30V RDS(on) = 0.070 ID = -4.6A 3 6 4 5 T o p View Fourth Generation HEXFETs from International Rectifier utili...1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Condition...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF7301 IRF7301TR

IRF[International Rectifier]
Part No. IRF7301 IRF7301TR
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulsed Drain Current, V...1 21 2.0 0.016 12 5.0 -55 to + 150 Units A W W/C V V/ns C Thermal Resistance Ratings Par...
Description FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.86K  /  9 Page

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    APM2054N

Anpec Electronics Coropration
Part No. APM2054N
OCR Text ...ximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 20 ...1 - Feb., 2002 1 www.anpec.com.tw DataSheet 4 U .com www.DataSheet4U.com APM2054N Absolut...
Description N-Channel Enhancement Mode MOSFET

File Size 468.32K  /  12 Page

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    IRF7307 IRF7307TR

IRF[International Rectifier]
Part No. IRF7307 IRF7307TR
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulse Drain Current, VG...1 21 2.0 0.016 12 5.0 -55 to + 150 -5.0 P-Channel -4.7 -4.3 -3.4 -17 Units A W W/C V V/ns ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 190.19K  /  10 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...m Ratings Parameter N-Channel ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, V...1.4 0.011 20 6.9 -55 to + 150 -6.0 Max. P-Channel -3.5 -3.0 -2.4 -12 Units A A A A W W/C V ...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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