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Infineon
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| Part No. |
SFH2400FA SFH2400
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| OCR Text |
...
mm2 mm x mm
60
60
grad deg.
1)
Kurzfristige Uberlastung bis 50 V fur 1 - 2 sec. ist erlaubt. Short-term overload up to 50 V for 1 to 2 sec. is permitted.
Semiconductor Group
2
1998-11-12
SFH 2400 SFH 2400 FA
... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
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| File Size |
35.67K /
4 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH2545FA SFH2545 SFH2540FA SFH2540 Q62702-P1795
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| OCR Text |
...FH 2545 FA 15 1 ( 5) 0.59 0.86 grad deg. nA A/W Electrons Photons Einheit Unit
IR S
VO VO
430 (> 360) -
- 390 (> 320)
mV mV
ISC ISC tr, tf
100 - 5
- 35 5
A A ns
C0 TCV
11 - 2.6
11 - 2.6
pF mV/K
T... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time From old datasheet system
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| File Size |
169.06K /
4 Page |
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it Online |
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Infineon
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| Part No. |
SFH2500FA SFH2500 SFH2505FA SFH2505
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| OCR Text |
...0.89
15 1 ( 5) 0.59 0.86
grad deg. nA A/W Electrons Photons
IR S
VO VO
430 (> 360) -
- 390 (> 320)
mV mV
ISC ISC
100 -
- 35
A A
Semiconductor Group
3
1998-11-12
SFH 2500/FA SFH 2505/FA
Kenn... |
| Description |
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time
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| File Size |
55.30K /
5 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
SFH3201
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| OCR Text |
... 60 15 3 ( 200)
mm2 mm x mm grad deg. pF nA
Semiconductor Group
3
1998-04-27
SFH 3201
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors ar... |
| Description |
NPN-Silizium-Fototransistor im SMT-Gehuse Silicon NPN Phototransistor in SMT Package
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| File Size |
104.32K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SFH3500FA SFH3500 SFH3505FA SFH3505
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| OCR Text |
... 13 10 3 (< 200)
mm2 mm x mm grad deg. pF nA
CCE ICE0
Semiconductor Group
3
1998-11-12
SFH 3500/FA SFH 3505/FA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichn... |
| Description |
NPN Silizium Fototransistor Silicon NPN Phototransistor
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| File Size |
54.62K /
5 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group] Infineon 红外LED
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| Part No. |
SFH4515 SFH4510 Q62702-P1798 Q62702-P1821
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| OCR Text |
...
14 0.09 0.3 x 0.3 0.5
grad deg. mm2 mm s
A LxB LxW tr, tf
Co
25
pF
VF VF IR
1.30 ( 1.5) 2.30 ( 2.8) 0.01 ( 1)
V V A
e
22
mW
Semiconductor Group
4
1998-11-12
SFH 4510 SFH 4515
Kennwerte ... |
| Description |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm GaAs-IR-Lumineszenzdioden (950 nm) GaAs Infrared Emitters (950 nm)
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| File Size |
57.18K /
6 Page |
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it Online |
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Infineon
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| Part No. |
BP104FS
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| OCR Text |
... S
60 2 ( 30) 0.70 0.90
grad deg. nA A/W Electrons Photon
Semiconductor Group
2
1997-11-19
BP 104 FS
Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circ... |
| Description |
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter
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| File Size |
29.87K /
4 Page |
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it Online |
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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| Part No. |
SFH221S SFH221 Q62702-P270
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| OCR Text |
...1.1 ... 1.6
mm
55
grad deg.
Semiconductor Group
400
SFH 221 S
Kennwerte (TA = 25 oC, Normlicht A, T = 2856 K) fur jede Einzeldiode Characteristics (TA = 25 oC, standard light A, T = 2856 K) per single diode Bezeich... |
| Description |
Silizium-Differential-Fotodiode Silicon Differential Photodiode From old datasheet system
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| File Size |
221.21K /
4 Page |
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it Online |
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