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For g1db Found Datasheets File :: 740 Search Time::1.422ms
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				Advanced Semiconductor ASI
Part No.	AT41470
OCR Text	...ICBO IEBO hFE CCB ft S21E P1dB g1db 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 25 mA IC = 25 mA IC = 25 mA IC = 25 mA IC = 10 mA...
Description	NPN SILICON BIPOLAR TRANSISTOR From old datasheet system Diode
File Size	14.21K / 1 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPA240D-SOT89
OCR Text	...TICS (Ta = 25 OC) SYMBOLS P1dB g1db PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=8V, Ids=350mA Gain at 1dB Compression f = 2GHz Vds=8V, Ids=350mA Power Added Efficiency at 1dB ...
Description	DC-6GHz High Efficiency Heterojunction Power FET
File Size	37.18K / 2 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	FLC257MH-6
OCR Text	g1db = 9.0dB(Typ.) High PAE: add = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides...
Description	C-Band Power GaAs FET
File Size	87.76K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	FLU35ZMNBSP FLU35ZM
OCR Text	g1db=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a ...
Description	L-Band Medium & High Power GaAs FET From old datasheet system
File Size	222.72K / 8 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFC480 EFC480C
OCR Text	...STICS (Ta = 25 C) SYMBOLS P1dB g1db PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Satu...
Description	Low Distortion GaAs Power FET
File Size	26.24K / 2 Page	View it Online	Download Datasheet

				FUJITSU LTD EUDYNA[Eudyna Devices Inc]
Part No.	FLU17XM
OCR Text	g1db=13.5dB (Typ.) * High PAE: add=46% (Typ.) * Hermetic Metal/Ceramic (SMT) Package * Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new pr...
Description	L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
File Size	77.66K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLU35XM
OCR Text	g1db=12.5dB (Typ.) * High PAE: add=46% (Typ.) * Hermetic Metal/Ceramic (SMT) Package * Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new pr...
Description	L-Band Medium & High Power GaAs FET
File Size	76.29K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPA480 EPA480C-SOT89
OCR Text	...TICS (Ta = 25 OC) SYMBOLS P1dB g1db PAE NF PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=8V, Ids=750mA Gain at 1dB Compression f = 2GHz Vds=8V, Ids=750mA Power Added Efficiency at 1dB Compression Vds=8V, Ids=750mA...
Description	DC-6GHz High Efficiency Heterojunction Power FET
File Size	36.63K / 2 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK207XV
OCR Text	g1db = 6.0dB(Typ.) High PAE: add = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK207XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it...
Description	GaAs FET & HEMT Chips
File Size	65.29K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK017WF
OCR Text	g1db = 7.5dB(Typ.) High PAE: add = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides ...
Description	X, Ku Band Power GaAs FET
File Size	105.81K / 4 Page	View it Online	Download Datasheet

For g1db Found Datasheets File :: 740 Search Time::1.422ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |