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  fet2-18 Datasheet PDF File

For fet2-18 Found Datasheets File :: 87    Search Time::1.765ms    
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    UPA1855 UPA1855GR-9JG

NEC
Part No. UPA1855 UPA1855GR-9JG
OCR Text ...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V VGS = 4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS 100 10 ID - Drai...
Description Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR

File Size 65.94K  /  8 Page

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    TBB1010

Renesas Electronics Corporation
Part No. TBB1010
OCR Text ...ion are applicable for FET1 and FET2 unit Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdow...18 5 Gate1 Voltage Rev.2, Feb. 2003, page 6 of 10 TBB1010 Drain Current vs. Gate Resist...
Description Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier

File Size 67.12K  /  10 Page

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    Sanyo Semiconductor
Part No. FW215
OCR Text ...Allowable Power Disipation, PD (FET2) -W 2.0 1.8 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M Allowable Power Disipation, PD - W P D - Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 ou nte 2.0 1.7...
Description DC-DC Converter Applications

File Size 70.99K  /  3 Page

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    EFC4602 ENA1048

Sanyo Semicon Device
Part No. EFC4602 ENA1048
OCR Text ...sely if you want to measure the FET2 side. No. A1048-3/6 EFC4602 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...18 20 VGS -- Qg Source-to-Source Voltage, VSS -- V IT13281 ASO Gate-to-Source Volt...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 69.85K  /  6 Page

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    FW213

Sanyo Semicon Device
Part No. FW213
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power D...
Description    DC-DC Converter Applications

File Size 43.89K  /  4 Page

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    UPA1856 UPA1856GR-9JG D13808EJ2V0DS00

NEC[NEC]
Part No. UPA1856 UPA1856GR-9JG D13808EJ2V0DS00
OCR Text ... 5000 mm2x 1.1 mm PD(FET1) : PD(FET2) = 1:1 0 30 60 90 120 TA - Ambient Temperature - C 150 -0.01 -0.1 -10 -1 VDS - Drain to Source Voltage - V -100 * -20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = -10 V -4.5 V...
Description From old datasheet system
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 75.16K  /  8 Page

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    FTD2008

Sanyo Semicon Device
Part No. FTD2008
OCR Text ...7 100 IT03209 PD(FET1) -- PD(FET2) ou Allowable Power Dissipation, PD -- W 1.0 M 0.8 nte do 0.8 na 0.6 ce ram 0.6 To t 1u ic al bo nit di ard ss ip (1 0.4 ati 0.4...
Description Nch Nch
DC / DC Converter Applications

File Size 29.44K  /  4 Page

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    NEC, Corp.
NEC[NEC]
Part No. UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9JG-E2
OCR Text ...1 Single Pulse PD (FET1) : PD (FET2) = 1:1 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 10 1 VDS - Drain to Source Voltage - V 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed FORWARD TRANSFE...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET

File Size 65.30K  /  8 Page

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    UPA2451 UPA2451TL UPA2451TL-E1

NEC
Part No. UPA2451 UPA2451TL UPA2451TL-E1
OCR Text ...0.1 Single Pulse PD (FET1):PD (FET2) =1:1 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 10 Pulsed VDS = 10 V TA = 125...
Description Nch enhancement-type MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 73.88K  /  8 Page

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    PA1855

NEC
Part No. PA1855
OCR Text ...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V VGS = 4.0 V TRANSFER CHARACTERISTICS 100 10 ID - Drain Current - A VDS = 1...
Description MOS Field Effect Transistor

File Size 66.05K  /  8 Page

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