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epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 119 Search Time::1.047ms
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				OSA Opto Light GmbH
Part No.	190282
OCR Text	...ensions in microns) p-Electrode epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse ...
Description	AlInGaP / GaAs LED Chips
File Size	48.56K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	193252
OCR Text	...ensions in microns) p-Electrode epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditi...
Description	AlInGaP / GaAs LED Chips
File Size	47.85K / 1 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	KV1701
OCR Text	...ation Precision Grown Junction epitaxy Available with 5% Tolerance CT ROHS Compliant 1 www.MICROSEMI.com APPLICATIONS Ultrahigh Q and excellent large signal handling capabilities, along with a greater than 10 to 1 capacitance rati...
Description	VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
File Size	95.59K / 3 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	190220
OCR Text	...iffusion 265 120 270 n-epitaxy GaAsP n-epitaxy GaAsP n-Substrate GaP 265 n-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse...
Description	GaAsP / GaP LED Chips
File Size	48.27K / 1 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	GC9901 GC9902 GC9903 GC9904 GC9911 GC9912 GC9913 GC9914 GC9923 GC9924 GC9921 GC9922 GC9931 GC9932 GC9933 GC9934 GC9941 GC9942 GC9943 GC9944
OCR Text	... MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi's complete line of barrier heights. Diodes are curr...
Description	Schottky Barrier Diodes TM For Mixers and Detectors
File Size	207.38K / 6 Page	View it Online	Download Datasheet

				MICROSEMI CORP-LOWELL Microsemi Corporation
Part No.	MG1041 MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1045-11 MG1046-11 MG1058-11 MG1056-11 MG1052-11 MG1054-11 MG1059-11
OCR Text	...grown at MSC by the Vapor Phase epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5...
Description	23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE GUNN Diodes Anode Heat Sink
File Size	148.28K / 2 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	126264
OCR Text	...ns in microns) p-Electrode p-epitaxy GaAlAs 365 120 160 typ. Active Layer n-epitaxy GaAlAs n-Electrode 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse v...
Description	GaAlAs / GaAlAs LED Chips (substrate removed)
File Size	48.19K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	194170
OCR Text	...ions in microns) n-Electrode epitaxy AlInGaP 265 120 250 p-Substrate GaAs 265 p-Electrode Chip thickness could also be 180 m or 210 m Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter...
Description	AlInGaP / GaAs LED Chips
File Size	47.95K / 1 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	KV2701 KV2301
OCR Text	...puter controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias,...
Description	VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
File Size	85.42K / 4 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	180272
OCR Text	...ensions in microns) p-Electrode epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse ...
Description	AlInGaP / GaAs LED Chips
File Size	48.86K / 1 Page	View it Online	Download Datasheet

For epitaxy Found Datasheets File :: 119 Search Time::1.047ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 |