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Atmel, Corp.
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| Part No. |
AT29BV010A
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| OCR Text |
...inst inadvertent program cycles dur- ing power transitions. any attempt to write to the device without the 3-byte com- mand sequence will start the internal write timers. no data will be written to the device; however, for the duration of t... |
| Description |
128K x 8 Single 2.7-volt Battery-Voltage Flash Memory(128K x 8单电.7V Battery-Voltage技术闪速存储器) 128K的8.7伏电池电压快闪记忆体28K的8单电源为2.7V电池电压技术闪速存储器
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| File Size |
141.00K /
12 Page |
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it Online |
Download Datasheet
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SILICON STORAGE TECHNOLOGY INC
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| Part No. |
SST29LE020-200-4I-EH
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| OCR Text |
...on of the internal write cycle. dur- ing the internal write cycle, all the data in the page buffer is written simultaneously into the memory array. hence, the page-write feature of sst29ee/le/ve020 allow the entire memory to be written in a... |
| Description |
256K X 8 EEPROM 3V, 200 ns, PDSO32
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| File Size |
329.20K /
27 Page |
View
it Online |
Download Datasheet |
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Motorola
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| Part No. |
MC33889
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| OCR Text |
...w Tsd-Tpw Rst-th1 Rst-th2 reset-dur Vddr td LR1 LR2 LD ThermS 160 130 20 4.5 4.1 0.85 1 5 5 10 20 5 20 25 25 50 4.6 4.2 1 2 10 40 Typ 3.5 14 75 150 190 160 40 4.7 4.3 2 ms V us mV mV mV mV measured at 50% of reset signal. Guaranteed by desi... |
| Description |
System Base Chip - Lite With Low Speed CAN
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| File Size |
498.42K /
30 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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