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  dp-10a Datasheet PDF File

For dp-10a Found Datasheets File :: 367    Search Time::2.281ms    
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    MBR20H100CT-G1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CT-E1

BCD Semiconductor Manufacturing Limited
Part No. MBR20H100CT-G1 MBR20H100CTF-G1 MBR20H100CTF-E1 MBR20H100CT-E1
OCR Text ... vity from junction to ambient: dp d /dt j <1/ ja . absolute maximum ratings (each diode leg) (note 1) parameter symbol condition value un...10a, t c =25 o c 0.77 v i f =10a, t c =125 o c 0.64 i f =20a, t c =25 o c 0.88 i f =20a, t c =125 o ...
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

File Size 568.02K  /  11 Page

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    ISL8201M ISL8201MIRZ

Intersil Corporation
Part No. ISL8201M ISL8201MIRZ
OCR Text ..., VIN = 12V, PVCC = 12V VOUT-DP VOUT-DN IOUT = 0A to 5A. Current slew rate = 2.5A/s, VIN = 12V, VOUT = 1.5V, PVCC = 12V IOUT = 0A to 5...10A, VOUT = 1.5V VIN = 12V 5V supply 12V supply 3.9 0.30 510 22 47 4.1 0.35 600 4.3 0.40 660 mA mA V...
Description 10A, High Efficiency DC/DC Module

File Size 870.07K  /  16 Page

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    Samsung Semiconductor Co., Ltd.
Part No. 2SK3600-01SJ 2SK3600-01L
OCR Text ...i d 20 a pulsed drain current i dp 80 a gate-source voltage v gs 30 v non-repetitive avalanche current i as 20 a e as mj l=681 h,vcc=48v ma...10a on-state resistance r ds (on) v gs =10v -4762 m ? 1.67 w drain-source voltage a vds<=100v 5*1 ...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
STD MOSFET 性病MOSFET

File Size 313.08K  /  22 Page

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    KF10N60F KF10N60P

KEC(Korea Electronics)
Part No. KF10N60F KF10N60P
OCR Text ...@t c =100 6 6* pulsed (note1) i dp 25 25* single pulsed avalanche energy (note 2) e as 400 mj repetitive avalanche energy (note 1) e ar 16.5...10a, v dd =50v, r g =25 , starting t j =25 . note 3) i s 10a, di/dt 200a/ , v dd bv dss , start...
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 76.50K  /  7 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
Part No. MBR20H100CT-G1 MBR20H100CTF-E1 MBR20H100CTF-G1
OCR Text ... vity from junction to ambient: dp d /dt j <1/ ja . absolute maximum ratings (each diode leg) (note 1) parameter symbol condition value un...10a, t c =25 o c 0.77 v i f =10a, t c =125 o c 0.64 i f =20a, t c =25 o c 0.88 i f =20a, t c =125 o ...
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

File Size 4,091.23K  /  10 Page

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    FMC20N50E

Fuji Electric
Part No. FMC20N50E
OCR Text ... d 20 a pulsed drain current i dp 80 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 20 a ...10a, v gs =10v - 0.27 0.31 ? forward transconductance g fs i d =10a, v ds =25v 11 22 - s input capac...
Description N-CHANNEL SILICON POWER MOSFET

File Size 423.99K  /  5 Page

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    FMC10N60E

Fuji Electric
Part No. FMC10N60E
OCR Text ... d 10 a pulsed drain current i dp 40 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanchecurrent i ar 10 a n...10a v gs =10v - 47 70.5 nc gate-source charge q gs - 10.5 16 gate-drain charge q gd - 13.5 20 avalan...
Description N-CHANNEL SILICON POWER MOSFETFeatures

File Size 514.78K  /  5 Page

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    FMH20N50E

Fuji Electric
Part No. FMH20N50E
OCR Text ... d 20 a pulsed drain current i dp 80 a gate-source voltage v gs 30 v repetitive and non-repetitive maximum avalanche current i ar 20 a ...10a, v gs =10v - 0.27 0.31 ? forward transconductance g fs i d =10a, v ds =25v 11 22 - s input capac...
Description N-CHANNEL SILICON POWER MOSFET

File Size 495.70K  /  5 Page

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    MBR2060CT-E1 MBR2060CT-G1 MBR2060CTF-E1 MBR2060CTF-G1

BCD Semiconductor Manufacturing Limited
Part No. MBR2060CT-E1 MBR2060CT-G1 MBR2060CTF-E1 MBR2060CTF-G1
OCR Text ...ivity from junction to ambient: dp d /dt j < 1/ ja . absolute maximum ratings (each diode leg) (note 1) parameter symbol condition value ...10a, t c =25 o c v f 0.85 v i f =10a, t c =125 o c 0.75 maximum instantaneous reverse cur- rent (no...
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

File Size 498.93K  /  11 Page

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For dp-10a Found Datasheets File :: 367    Search Time::2.281ms    
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