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Philips
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| Part No. |
BU2527AX
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| OCR Text |
Diffused Power Transistor
BU2527AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
52.59K /
7 Page |
 View
it Online |
Download Datasheet
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Philips
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| Part No. |
BU2527DX
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| OCR Text |
Diffused Power Transistor
BU2527DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
59.99K /
7 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...re 1b, p-type regions have been diffused into the n-type substrate of Figure 1a leaving an n-type channel between the source and drain. (A c...junction, a depletion region surrounds the p-n junctions when the junctions are reverse biased (Figu... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
AN101
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| OCR Text |
...sed, with the acceptor impurity diffused first onto n-type silicon, and the donor impurity diffused later to form a second n-type region and...junction FET consists essentially of a channel of semiconductor material along which a current may f... |
| Description |
MOSFETs
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| File Size |
42.22K /
5 Page |
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it Online |
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Philips
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| Part No. |
BU4508AF
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| OCR Text |
Diffused Power Transistor
Product specification Supersedes data of January 1998 File under Discrete Semiconductors, SC06 June 1998
Phili...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A ... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
71.23K /
12 Page |
View
it Online |
Download Datasheet |
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Philips
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| Part No. |
BU4508AX
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| OCR Text |
Diffused Power Transistor
BU4508AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 8 15 4 6 5 45 150 150 UNIT V V A A ... |
| Description |
Silicon Diffused Power Transistor
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| File Size |
43.15K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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