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die wafer Datasheet PDF File

For die wafer Found Datasheets File :: 4914 Search Time::1.671ms
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				Harris Semiconductor HARRIS[Harris Corporation]
Part No.	CD74HCT393M CD74HC393M 74393 CD74HC393E CD74HCT393E
OCR Text	... the tape and reel. 2. wafer or die for this part number is available which meets all electrical specifications. Please contact your local sales office or Harris customer service for ordering information. TEMP. RANGE (oC) -55 to 125 -55 to ...
Description	High Speed CMOS Logic Dual 4 -Stage Binary Counter CTV 6C 6#20 PIN PLUG
File Size	30.84K / 7 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	INA-02100
OCR Text	...mbly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] Chip Outline[1] RF OUT G...wafer. 3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline ...
Description	Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise Cascadable Silicon Bipolar MMIC Amplifier
File Size	49.46K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7313 IRF7313TR
OCR Text	...al characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices...wafer LOT CODE (LAST 4 DIGITS) 312 INTERNATIONAL RECTIFIER LOGO F7101 TOP PART NUMBER BO...
Description	30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	542.53K / 7 Page	View it Online	Download Datasheet

				Amphenol, Corp. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-0600 MSA-0600-GP4
OCR Text	...mbly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "C...wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0600-GP4 ...
Description	Cascadable Silicon Bipolar MMIC Amplifier(可级联的硅双极型单片式微波集成电路放大器) 级联硅双极MMIC放大器（可级联的硅双极型单片式微波集成电路放大器
File Size	51.35K / 4 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	OP249 OP249ARC_883 OP249AZ OP249EJ OP249FZ OP249GP OP249GS OP249GS-REEL OP249GS-REEL7
OCR Text	... TL072 and MC34082 Available in die Form APPLICATIONS Output Amplifier for Fast D/As Signal Processing Instrumentation Amplifiers Fast Sampl...wafer lots at +125 C with LTPD of three. 2 Guaranteed by CMR test. 3 Settling time is sample tested....
Description	Dual, Precision JFET High Speed Operational Amplifier
File Size	687.35K / 17 Page	View it Online	Download Datasheet

				Zilog. Zilog, Inc.
Part No.	Z86C15
OCR Text	... to the packaged device and not die or wafer. 6 Z86C15 CP96KEY0603 DC CHARACTERISTICS (Z86C15) VCC = 5.0V 10% @ 0C to +70C Sym VCH VCL VIH VIL VRH VRL VOH VOH VOL VOL IOL IIL IOL ICC POR ICC1 ICC2 RP RP RP Parameter Clock Input Hi...
Description	CMOS Z8 8-BIT MCU KEYBOARDCONTROLLER
File Size	68.04K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	...m 8.58 mil 304.8 m 12 mil Note: die thickness is 4.5 mil, and backside metallization is 200 A Ti and 2000 A Au. 5-22
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...mended mounting procedure is to die attach at a stage temperature of 300C using a gold-tin preform under forming gas. Assembly can be prefor...wafer. 5-33 5965-8694E ATF-13100 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TS...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

For die wafer Found Datasheets File :: 4914 Search Time::1.671ms
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