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  d-250a Datasheet PDF File

For d-250a Found Datasheets File :: 13255    Search Time::2.454ms    
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    CEM317210

Chino-Excel Technology
Part No. CEM317210
OCR Text ...quired. Surface mount Package. D 8 CEM3172 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Param...250A VGS = 10V, ID = 6.3A VGS = 4.5V, ID = 5.0A 1 16 22 3 20 32 V m m BVDSS IDSS IGSSF IGSSR VGS = 0...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 384.52K  /  4 Page

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    CEM2407

Chino-Excel Technology
Part No. CEM2407
OCR Text ...istance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Chara...250A VGS = -4.5V, ID = -5.3A VGS = -2.5V, ID = -4.2A VDS = -5V, ID = -5.3A VDS = -10V, VGS = 0V, f =...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 418.65K  /  4 Page

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    CEM2401

Chino-Excel Technology
Part No. CEM2401
OCR Text ...quired. Surface mount Package. D 8 CEM2401 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Param...250A VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3.2A VDS = -5.0V, ID = -4A VDS = -10V, VGS = 0V, f = 1...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 402.78K  /  4 Page

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    CEF730G CEP730G CEB730G

Chino-Excel Technology
Part No. CEF730G CEP730G CEB730G
OCR Text ...ad free product is acquired. D D G S CEB SERIES TO-263(DD-PAK) G G D S G CEP SERIES TO-220 D S CEF SERIES TO-...250A VDS = 400V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, I...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 411.39K  /  4 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... A nA Conditions VGS = 0V, I D = 250A VGS = 0V, I D = -250A Reference to 25C, I D = 1mA Reference to 25C, I D = -1mA VGS = 10V, I D = 1.0A VGS = 4.5V, I D = 0.50A VGS = -10V, I D = -1.0A VGS = -4.5V, I D = -0.50A VDS = VGS, ID = 250A VDS...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRFP054V

Power MOSFET
International Rectifier
Part No. IRFP054V
OCR Text ... Applications Description l D VDSS = 60V RDS(on) = 9.0m G S ID = 93A Advanced HEXFET(R) Power MOSFETs from International Rec...250A --- V/C Reference to 25C, ID = 1mA 9.0 m VGS = 10V, ID = 54A 4.0 V VDS = VGS, ID = 250A --- S ...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?

File Size 215.28K  /  8 Page

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    SPDP50D375-503

Sensitron
Part No. SPDP50D375-503
OCR Text ...er nickel plated base plate Sub D connector shell is steel with 30u" gold plated socket contacts Passivated Steel hardware on power terminal...250A programmable Table 2 - Physical Characteristics Temperature Operating Temperature Storage T...
Description DC Solid State Power Controller Module

File Size 255.60K  /  10 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS8N60 JCS8N60B-O-B-N-B JCS8N60C-O-C-N-B JCS8N60F-O-F-N-B JCS8N60S-O-S-N-B
OCR Text ....5V Bottom 5V Top 10 25 I D [A] ID [A] 150 1 1 Notes 1. 250s pulse test 2. TC=25 0.1 Notes 1.250s pulse test 2.VDS=40...250A -50 -25 0 25 50 75 100 125 150 0.5 Notes 1. VGS=10V 2. ID=3.5A -50 -25 0 25 50 75 100 1...
Description N-CHANNEL MOSFET

File Size 799.76K  /  12 Page

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    IRGBC40K-S

International Rectifier
Part No. IRGBC40K-S
OCR Text ...age avalanche energy ? 15 mj p d @ t c = 25c maximum power dissipation 160 w p d @ t c = 100c maximum power dissipation 65 t j operatin...250a v (br)ecs emitter-to-collector breakdown voltage ? 20 ---- ---- v v ge = 0v, i c = 1.0a d v ...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

File Size 112.52K  /  7 Page

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    IRF9952QPBF10 IRF9952QTRPBF

International Rectifier
Part No. IRF9952QPBF10 IRF9952QTRPBF
OCR Text ...4.5V, ID = -0.50A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 3.5A VDS = -15V, I D = -2.3A VDS = 24V, VGS = 0V VDS = -24V, V GS = 0V VDS = 24V, V GS = 0V, TJ = 125C VDS = -24V, V GS = 0V, TJ = 125C VGS = 20V N-Channel I...
Description HEXFETPOWERMOSFET
Advanced Process Technology

File Size 263.10K  /  10 Page

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