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  d-100a Datasheet PDF File

For d-100a Found Datasheets File :: 24414    Search Time::1.75ms    
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    IPI120P04P4L-03 IPB120P04P4L-03 IPP120P04P4L-03

Infineon Technologies AG
Part No. IPI120P04P4L-03 IPB120P04P4L-03 IPP120P04P4L-03
OCR Text ...t continuous drain current 1) i d t c =25c, v gs =-10v -120 a t c =100c, v gs =-10v 2) -114 pulsed drain current 2) i d,pulse t c =25c -480 ...100a - 4.0 5.2 m w v gs =-4.5v, i d =-100a, smd version - 3.7 4.9 v gs =-10v, i d =-100a - 2.9 3.4 v...
Description OptiMOS-P2 Power-Transistor

File Size 208.41K  /  9 Page

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    Fairchild Semiconductor, Corp.
Part No. SGU20N40L
OCR Text ...m a x i m u m p o w e r d i s s i p a t i o n @ t c...100a i c = 70a collector-emitter voltage, v ce [v] case temperature, t c [ ] 0123456 0 4 8 12 16...
Description Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251

File Size 190.85K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M10JFLL
OCR Text D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ...100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.46K  /  2 Page

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    SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03

INFINEON[Infineon Technologies AG]
Part No. SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03
OCR Text ...n-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is ab...100A, VGS =0 to 10V VDD =24V, ID =100A Symbol Conditions min. Values typ. 142 5300 2450 470...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL

File Size 416.00K  /  8 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT1001R6SFLL APT1001R6BFLL APT1001R6BFLLG
OCR Text ...e * FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25C unless otherwise specified. APT1001R6BFLL_SFLL UNIT Volts Amps 1000 8 32 ...100A/s) Reverse Recovery Charge (IS = -8A, di/dt = 100A/s) Peak Recovery Current (IS = -8A, di/dt = ...
Description 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
POWER MOS 7 R FREDFET

File Size 149.32K  /  5 Page

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    Renesas Technology
Part No. HD4074629R
OCR Text ... diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on...100a) hd404628rtf 100-pin plastic tqfp (tfp-100b) hd4046212r hd4046212rh 12,288 100-pin plastic qfp ...
Description AS Microcomputer Incorporating a DTMF Generator Circuit

File Size 939.11K  /  157 Page

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    IRGP4078DPBF IRGP4078D-EPBF

International Rectifier
Part No. IRGP4078DPBF IRGP4078D-EPBF
OCR Text ...e-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 278 w p d @ t c = 100c maximum power dissipation 139 t...100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.45 ? v/c v ge = 0v, i ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

File Size 827.74K  /  11 Page

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    IPL60R360P6S

Infineon Technologies AG
Infineon Technologies A...
Part No. IPL60R360P6S
OCR Text ...(on),max 0.36 w q g,typ 22 nc i d,pulse 30 a e oss @400v 3 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks ipl...100a/s reverse recovery charge q rr - 3 - c v r =400v, i f =5.6a,d i f /d t =100a/s peak reverse r...
Description IGBT Modules
Very high commutation ruggedness

File Size 1,345.05K  /  14 Page

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