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For cre Found Datasheets File :: 1953 Search Time::1.297ms
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				PANASONIC[Panasonic Semiconductor] Mospec Semiconductor
Part No.	2SC1359 2SA838
OCR Text	...25C) Symbol ICBO hFE fT NF Zrb cre * Conditions VCB = 10V, IE = 0 VCB = 10V, IE = -1mA VCB = 10V, IE = -1mA, f = 200MHz VCB = 10V, IE = -1mA, f = 5MHz VCB = 10V, IE = -1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz min typ max...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification)
File Size	50.96K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC4227 2SC4227NE68130 2SC4227-T1
OCR Text	... Figure SYMBOL ICBO IEBO hFE fT cre \|S21e\|2 NF 10 40 4.5 7.0 0.45 12 1.4 2.7 0.9 MIN. TYP. MAX. 0.8 0.8 240 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA*1 VCE = 3 V, IC = 7 mA VCE = 3 V, IE = 0,...
Description	Silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 离散
File Size	49.42K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4228 2SC4228-T1 2SC4228-T2 2SC4228NE68030
OCR Text	...-0 FEATURES * High fT * Low cre * High : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz) 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) 1 \|S21e\|2 : * Super Mini Mold Package. (EI...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	47.68K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFQ67T
OCR Text	...pecified. SYMBOL ICBO hFE Cc Ce cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS IE = 0; VCB = 5 V IC...
Description	NPN 8 GHz wideband transistor
File Size	92.66K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFQ67W
OCR Text	...pecified. SYMBOL ICBO hFE Cc Ce cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB...
Description	NPN 8 GHz wideband transistor
File Size	101.42K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BFQ67
OCR Text	...pecified. SYMBOL ICBO hFE Cc Ce cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) noise figure CONDITION...
Description	NPN 8 GHz wideband transistor
File Size	103.49K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	...ymbol ICBO IEBO hFE fT(1) fT(2) cre S21e2(1) S21e2(2) NF VCB=5V, IE=0 VEB=1.5V, IC=0 VCE=4V, IC=20mA VCE=1V, IC=10mA VCE=3V, IC=30mA VCB=2V, f=1MHz VCE=2V, IC=5mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz 50 13 18 12 14 1...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	UPA809 UPA809T UPA809T-T1
OCR Text	...atio SYMBOL ICBO IEBO hFE fT fT cre \|S21\|2 \|S21\|2 NF NF hFE1/hFE2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 3 mANote 1 80 4.0 4.5 9.0 0.75 2.5 3.5 6.5 1.7 1.5 0.85 2.5 0.85 MIN. TYP. MAX. 0.1 0.1 160 GHz GHz pF dB dB dB ...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 微波低噪声放大器NPN硅外延晶体管，内个元素迷你模
File Size	62.45K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA831 UPA831TC UPA831TC-T1 UPA831TC-A
OCR Text	... Figure Symbol ICBO IEBO hFE fT cre \|S21e\| NF 2 Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA Note 1 MIN. - - 70 3.0 - 7.0 - TYP. - - - 4.5 0.7 9.0 1.2 MAX. 1.0 1.0 140 - 1.5 - 2.5 Unit A A VCE ...
Description	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
File Size	77.29K / 16 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC3356 2SC3356S 2SC3356R24 2SC3356R25 2SC3356R23 2SC3356-VM 2SC3356-T1B 2SC3356-T2B
OCR Text	...Figure SYMBOL ICBO IEBO hFE* fT cre** 50 120 7 0.55 2 MIN. TYP. MAX. 1.0 1.0 300 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA A A GHz 1.0 pF dB 2.0 dB VCE = 10 V, IC = 20 mA VCB...
Description	For amplify low noise and high frequency MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-346 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 346
File Size	100.80K / 8 Page	View it Online	Download Datasheet

For cre Found Datasheets File :: 1953 Search Time::1.297ms
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