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For crack Found Datasheets File :: 594 Search Time::1.344ms
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				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MJF6107 ON2049
OCR Text	.... lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting th...
Description	PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS From old datasheet system
File Size	216.97K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA13H1317M RA13H1317M-E01 RA13H1317M-01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	135-175MHz 13W 12.5V MOBILE RADIO 135 - 175MHz3W 12.5V移动通信
File Size	66.31K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA13H4047M RA13H4047M-01 RA13H4047M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
File Size	84.04K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA30H2127M RA30H2127M-01 RA30H2127M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	210-270MHz 30W 12.5V MOBILE RADIO 210 - 270MHz功率30W 12.5V移动通信
File Size	57.86K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA30H4047M RA30H4047M-01 RA30H4047M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	400-470MHz 30W 12.5V MOBILE RADIO 400 - 470MHz的功0W 12.5V移动通信
File Size	65.93K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA07N4047M RA07N4047M-01 RA07N4047M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块 30V N-Channel PowerTrench MOSFET
File Size	61.24K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	RA35H1516M RA35H1516M-01 RA35H1516M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	154-162MHz 40W 12.5V MOBILE RADIO 154 - 162MHz功率40W 12.5V移动通信 154 MHz - 162 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
File Size	74.15K / 8 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	ILX551A
OCR Text	...ollowing can cause the glass to crack: because the upper and lower ceramic layers are shielded by low-melting glass, (1) Applying repetitive bending stress to the external leads. (2) Applying heat to the external leads for an extended perio...
Description	From old datasheet system 2048-pixel CCD Linear Sensor (B/W)
File Size	128.93K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA07M4452M RA07M4452M-01 RA07M4452M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	440-520MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
File Size	61.05K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA30H0608M RA30H0608M-01 RA30H0608M-E01
OCR Text	...amic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resist...
Description	68-88MHz 30W 12.5V MOBILE RADIO 68 - 88MHz功率30W 12.5V移动通信
File Size	56.04K / 9 Page	View it Online	Download Datasheet

For crack Found Datasheets File :: 594 Search Time::1.344ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |