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意法半导
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| Part No. |
M28W160
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| OCR Text |
...temperature (2) C40 to 85 c t bias temperature under bias C40 to 125 c t stg storage temperature C55 to 155 c v io input or output volta...erase operations are not achievable. when wp is at v ih , the lockable blocks are unprotected and t... |
| Description |
16Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory(16Mb低压闪速存储器)
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| File Size |
289.68K /
40 Page |
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it Online |
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意法半导
STMicroelectronics N.V.
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| Part No. |
M29F04B55N1F M29F04B45K1E M29F04B90N1T M29F04B45N6E -M29F04B70K6F
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| OCR Text |
... range option 3) ?40 to 125 c t bias temperature under bias ?50 to 125 c t stg storage temperature ?65 to 150 c v io (2) input or output vo...erase commands from modifying the memory. program and erase commands are writ- ten to the command in... |
| Description |
Reversible Motor Driver for Output 1.0A (1 Motor); Package: SIP9; Constitution materials list: Packing style: Tube packaging; Package quantity: 1000
4ch System Motor Driver ICs; Package: HSOP-M28; Constitution materials list: Packing style: Tube packaging; Package quantity: 1000; Minimum package quantity: 1000; 4兆位12KB的8，统一座）单电源闪
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory 4兆位12KB的8，统一座）单电源闪
Reversible Motor Drivers for Output 1.0A or more (2 Motors); Package: HSIP10; Constitution materials list: Packing style: Tube packaging; Package quantity: 500; Minimum package quantity: 500; 4兆位12KB的8，统一座）单电源闪
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| File Size |
138.19K /
20 Page |
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it Online |
Download Datasheet |
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SGS Thomson Microelectronics
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| Part No. |
AN1122
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| OCR Text |
...tection status while applying a bias to the sense amplifier. this ensures the cell is programmed strongly enough to always read correctly un...erase operation to change the contents of a cell that the user thought was protected. the same three... |
| Description |
APPLYING PROTECTION AND UNPROTECTION TO M29 SERIES FLASH MEMORIES
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| File Size |
64.68K /
10 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K9F3208W0A
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| OCR Text |
...0.6 to +7.0 v temperature under bias t bias -10 to +125 c storage temperature t stg -65 to +150 c short circuit output current i os 5 ma d...erase i cc 3 - - 10 20 - 25 40 stand-by current(ttl) i sb 1 ce =v ih , wp = se =0v/v cc - - 1 - - 1... |
| Description |
4M x 8Bit NAND Flash Memory Data Sheet
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| File Size |
429.91K /
23 Page |
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it Online |
Download Datasheet |
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意法半导
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| Part No. |
M29W800B
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| OCR Text |
...g temperature (3) 40 to 85 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase controller through a command interface (c.i.). for added data protection, program or erase exe... |
| Description |
8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器)
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| File Size |
236.00K /
33 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
意法半导
STMicroelectronics N.V.
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| Part No. |
M29W200 M29W200BB M29W200BT M29W200BB70N6T M29W200BB90M6T M29W200BT120M6T
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| OCR Text |
...e range option 6) 40 to 85 c t bias temperature under bias 50 to 125 c t stg storage temperature 65 to 150 c v io (2) input or output vol...erase operations on all blocks will be possible. the transition from v ih to v id must be slower tha... |
| Description |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPSE 19C 19#20 PIN RECP
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，引导块低压单电源闪
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| File Size |
146.70K /
22 Page |
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it Online |
Download Datasheet |
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Price and Availability
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