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Duracell
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| Part No. |
ZAXM-201-1C-ES
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| OCR Text |
.................................. 9 pin signal & interfaces pin signals i/o confguration ............................................................................................................................................................ |
| Description |
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| File Size |
1,166.71K /
18 Page |
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Samsung Electronics
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| Part No. |
KFG1G16Q2A-DEBX KFH2G16Q2A-DEBX
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| OCR Text |
...ttings. (chapter: 3.4.4, 3.6, 3.9.5, 3.12, 3.12.1, 3.13.1, 3.13.3, 3.13.4, 3.14.1, 3.14.2, 3.14.3, 3.14.4, 3.14.5) 7. revi...5kb internal bufferram: ? slc nand array: device performance ? host int... |
| Description |
FLASH MEMORY
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| File Size |
2,203.75K /
149 Page |
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Samsung Electronics
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| Part No. |
KFG1G16Q2C
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| OCR Text |
...for asynchronous write revised. 9. chapter 5.9 ac characteristics for load / program / erase performance revised. apr. 30, 2008 oct. ...5kb internal bufferram: ? slc nand array: device performance ? host int... |
| Description |
1Gb OneNAND C-die
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| File Size |
1,255.08K /
142 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KFW4G16Q2M KFW4G16Q2M-DED6 KFG1G16Q2M-DEB6
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| OCR Text |
...n on controller status register 9. added commands related to interrupt status register bits 10. revised write protection status on chapter 3...5kb internal bufferram: ? slc nand array: device performance ? host int... |
| Description |
FLASH MEMORY(66MHz)
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| File Size |
1,620.51K /
125 Page |
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it Online |
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