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  8a- Datasheet PDF File

For 8a- Found Datasheets File :: 17077    Search Time::1.766ms    
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    2SC4055

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4055
OCR Text 8A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Storage TemperatureTstg Junction Temperature Tj Collector to Base Voltage V CBO Collector to Emitter Voltage V CEOV = 5V ...
Description Switching Power Transistor(8A NPN)

File Size 386.37K  /  12 Page

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    2SC4056

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4056
OCR Text 8A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction TemperatureTj 150 *Z Collector to Base Voltage V 600 V CBO Col...
Description Switching Power Transistor(8A NPN)

File Size 386.82K  /  12 Page

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    2SC4057

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4057
OCR Text 8A NPN OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Co...
Description Switching Power Transistor(8A NPN)

File Size 510.73K  /  12 Page

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    2SD1717

Savantic, Inc.
Part No. 2SD1717
OCR Text ...utput capacitance CONDITIONS IC=8A ;IB=0.8A IC=8A ; VCE=5V VCB=160V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 210 MIN TYP. 2SD1717 SYMBOL VCEsat VBE ICBO IEBO hFE-1 h...
Description Silicon NPN Power Transistors

File Size 177.03K  /  3 Page

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    2SD1717

Inchange Semiconductor Company Limited
Part No. 2SD1717
OCR Text ...mitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE ICBO Base-emitter voltage IC=8A ; VCE=5V VCB=160V; IE=0 1.8 V A A Collector cut-off current 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 hFE-...
Description Silicon NPN Power Transistors

File Size 78.26K  /  3 Page

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    2SD1655

Savantic, Inc.
Part No. 2SD1655
OCR Text ...; RBE=; IC=5mA; IE=0 IC=4A;IB=0.8A IC=4A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=1 A ; VCE=5V IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=50@ 8 3 0.7 MHz s MIN 800 1500 5.0 1.5 1.0 10 V V mA A TYP. MAX UNIT SYMBOL V(BR)CEO V(BR)...
Description Silicon NPN Power Transistors

File Size 151.29K  /  3 Page

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    2SD1654

Savantic, Inc.
Part No. 2SD1654
OCR Text ...RBE=; IC=5mA; IE=0 IC=2.5A;IB=0.8A IC=2.5A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=0.5 A ; VCE=5V IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7@ 8 3 0.7 MHz s MIN 800 1500 8.0 1.5 1.0 10 V V mA A TYP. MAX UNIT SYMBOL V(BR)C...
Description Silicon NPN Power Transistors

File Size 151.25K  /  3 Page

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    2SD1545

Savantic, Inc.
Part No. 2SD1545
OCR Text ...all time CONDITIONS IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz ICP=4A ;IB1(end)=0.8A 8 MIN 2SD1545 SYMBOL VCEsat VBEsat ICBO IEBO hFE fT COB tf TYP. 3.0 MAX 5...
Description Silicon NPN Power Transistors

File Size 232.84K  /  3 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...0 I D = -1mA, VDS = -10V I D = -8A, VGS = -10V Note4 I D = -8A, VGS = -4V Note4 I D = -8A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -8A RL = 3.75 2 2SJ530(L),2SJ530(S) Main Characteristics Power vs. Temperatu...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...0 I D = -1mA, VDS = -10V I D = -8A, VGS = -10V Note4 I D = -8A, VGS = -4V Note4 I D = -8A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -8A RL =3.75 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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