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IRF[International Rectifier]
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| Part No. |
JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389
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| OCR Text |
...A VDS >-15V, IDS = -4.1A VDS= -80v ,VGS=0V VDS = -80v, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -6.5A VDS = -50V VDD = -50V...0.112 -- Voltage RDS(on) Static Drain-to-Source On-State -- -- 0.30 Resistance -- -- 0.35 VGS(th) Ga... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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| File Size |
125.31K /
8 Page |
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it Online |
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Diodes
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| Part No. |
ZXTC6720MC ZXTC6720MCTA
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| OCR Text |
...zxtc6720mc dual 80v npn & 70v pnp low saturation transistor combination features and benefits npn transistor ? bv ceo ...0.8mm high package for thin applications ? r ja efficient, 40% lower than sot26 ? 6mm 2 footp... |
| Description |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
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| File Size |
223.50K /
9 Page |
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it Online |
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Advanced Power Electronics, Corp.
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| Part No. |
AP18T10AGH-HF
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| OCR Text |
...in-source leakage current v ds =80v, v gs =0v - - 25 ua drain-source leakage current (t j =125 o c) v ds =80v ,v gs =0v - - 250 ua i gss gat...0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.... |
| Description |
9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| File Size |
86.85K /
4 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK155H MSK155 MSK155E
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| OCR Text |
...t High Voltage Operation: Up to 80v Low Quiescent Current: 40mA Typ. Total High Output Current: 5A Min. Per Amp High Speed: 10V/S Typ. Monol...0.1 2 10 5 20 10 5 110 10 33.5 30 55 2 10 100
12
MSK155 5 Min. 10 90 29 40 10 6 90 Typ. 35 20 0.... |
| Description |
HIGH POWER DUAL OPERATIONAL AMPLIFIER
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| File Size |
194.44K /
5 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
FS5VSH-3
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| OCR Text |
...v, v gs = 0v, f = 1mhz v dd = 80v, i d = 2a, v gs = 4v, r gen = r gs = 50 w i s = 2a, v gs = 0v channel to case i s = 5a, dis/dt = C100a/ m s performance curves 0 10 20 30 40 50 0 200 50 100 150 10 ? 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.19K /
4 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2086 NTE2085
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| OCR Text |
... to 480 watts (1.5A per output, 80v, 26% duty cycle). The NTE2085 is a quad driver intended for use with TTL, low-speed TTL, and 5V MOS logi...0.5Ein to 0.5Eout 0.5Ein to 0.5Eout VR = 80v VR = 80v, TA = +70C IF = 1.0A IF = 1.5A - - - - - - - -... |
| Description |
Integrated Circuit 4-Stage Darlington Array
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| File Size |
21.24K /
3 Page |
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it Online |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE2088
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| OCR Text |
... to 480 Watts (1.5A per output, 80v, 26% duty cycle). This device has a minimum output breakdown of 50V and a minimum VCE(sus) of 35V measur...0.5 EIN to 0.5 EOUT 0.5 EIN to 0.5 EOUT, IC = 1.25A VR = 80v VR = 80v, TA = +70C IF = 1A IF = 1.5A
... |
| Description |
Dual Differential Comparator, Enhanced Voltage 8-TSSOP -40 to 125
Integrated Circuit 4-Segment Darlington Array, w/Pre-Driver Stage for use with PMOS and 12V CMOS
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| File Size |
21.77K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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