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				RHOPOINT[RHOPOINT COMPONENTS]
Part No.	RI-80
OCR Text	80 Series Dry Reed Switch RI-80 Series Ultra-micro dry-reed switch hermetically sealed in a gas-filled glass envelope. Single-pole, single-...160 (20 AT) 140 (20 AT) 0.45 106 (energization) (energization) without test coil RH 45% * Onl...
Description	Dry Reed Switch
File Size	81.34K / 2 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba, Corp.
Part No.	TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT-80 TCS59SM816BFT-80 TCS59SM804BFT-75 TCS59SM804BFTL-70
OCR Text	80 2000-03-14 1/49 ? toshiba is continually working to improve the quality and the reliability of its products. nevertheless, semiconduc...160 ? 150 3 standard products (bft) ? 3 ? 3 ? 3 self refresh current self refresh...
Description	8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
File Size	2,427.58K / 49 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB81F161622B-80 MB81F161622B-70 MB81F161622B-60 E511039
OCR Text	...NAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory s DESCRIPTION The Fujitsu ...160 mA max. 400A max. 400A max. Reference Spec (100MHz @CL=3) 3 - 3 - 3 clk min. 100 MHz max. 10 ...
Description	2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM From old datasheet system
File Size	465.18K / 45 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HSD32M72D9H-80 HSD32M72D9H-75 HSD32M72D9H-10 HSD32M72D9H HSD32M72D9H-10L
OCR Text	...0L :100MHz ( CL=3) HSD32M72D9H -80 :125MHz ( CL=3) HSD32M72D9H -75 :133Mhz (CL=3) * Burst mode operation * Auto & self refresh capability (8...160 161 162 163 164 165 166 167 168 Symbol DQ50 DQ51 Vcc DQ52 NC NC NC Vss DQ53 DQ54 DQ55 Vss DQ5...
Description	Synchronous DRAM Module 256Mbyte (32Mx72bit),DIMM with ECC based on 32Mx8, 4Banks, 8K Ref., 3.3V
File Size	154.45K / 10 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMF4M32M8VGL-80 HMF4M32M8VGL-90 HMF4M32M8VGL-120 HMF4M32M8VGL-70
OCR Text	...ATURES PIN w Access time : 70, 80, 90, 120ns w High-density 16MByte design w High-reliability, low-power design w Single + 3.3V 0.3V power...160 32 240 40.0 2.5 mA A V SYMBOL IL1 IL0 VOH VOL 72 2.4 0.45 128 mA MIN MAX 1.0 1.0 UNIT A A V V ...
Description	Flash-ROM Module 16MByte (4Mx32Bit), 72Pin-SIMM, 3.3V Design
File Size	424.91K / 11 Page	View it Online	Download Datasheet

				Sharp Corporation
Part No.	LH5P860N-80 LH5P860D-80
OCR Text	80 ns (MAX.) * Cycle time: 140 ns (MIN.) * Single +5 V power supply * Pin compatible with 1M standard SRAM * Power consumption (MAX.): Opera...160 8,000 35 8 10,000 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ...
Description	CMOS 512K (64K x 8) Pseudo-Static RAM
File Size	109.71K / 13 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba, Corp.
Part No.	TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL-75 TCS59SM704AFTL-80 TCS59SM704AFTL-70 TCS59SM704AFTL-75 TCS59SM708AFTL-70 TCS59SM704AFT-70 TCS59SM708AFT-70 TCS59SM708AFTL-80 TCS59SM708AFT-80 TCS59SM704AFT-80 TC59SM716AFTL
OCR Text	80 2000-02-08 1/49 ? toshiba is continually working to improve the quality and the reliability of its products. nevertheless, semiconduc...160 ? 150 3 standard products (aft) ? 2 ? 2 ? 2 ma self refresh current self ref...
Description	2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
File Size	2,425.12K / 49 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH1BF6RDPQ-80 RJH1BF6RDPQ-80-15
OCR Text	80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...160 200 i c = 30 a ta = 25 c v ge v ce v cc = 600 v 300 v v cc = 600 v 300 v 10 100 1000 10000 v...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	95.50K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH1BF7RDPQ-80 RJH1BF7RDPQ-80-15
OCR Text	80 silicon n channel igbt high speed power switching features ? voltage resonance circuit use ? reverse conducting igbt with monoli...160 200 i c = 35 a ta = 25 c v ge v ce v cc = 600 v 300 v v cc = 600 v 300 v 10 100 1000 10000 v...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	95.55K / 7 Page	View it Online	Download Datasheet

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