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INFINEON[Infineon Technologies AG]
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| Part No. |
IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E3045A
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| OCR Text |
...pF
Ciss
800v
600V
0.6a
400V
0.4A
10pF
Coss
0.2A 200V 0.0A 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Crss 0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter v... |
| Description |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system
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| File Size |
387.25K /
13 Page |
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it Online |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
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| Part No. |
STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC80Z P6NC80
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| OCR Text |
...e-Drain Charge VDD = 640V, ID = 6a, VGS = 10V Test Conditions VDD = 400 V, ID = 3 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) Min. Typ. 26 10 45 12 18 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-volt... |
| Description |
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800v 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
509.38K /
13 Page |
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International Rectifier, Corp.
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| Part No. |
IRG4PH50KDPBF
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| OCR Text |
...( a/ s ) i = 3 2 a i = 1 6a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 0 300 600 900 1200 100 1000 f di /d t - ( a/ s ) rr q - (nc ) i = 32a i = 16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 10 100 1... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管，超快软恢复二极管
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| File Size |
674.13K /
11 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
QM150DY-3H
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| OCR Text |
...00 300 t j =25? i b =10a i b =0.6a i b =1.5a i b =5a i b =3a 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 23457 2 10 23457 3 10 2 v ce =...800v t on t s t f performance curves common emitter output characteristics (typical) common emitter ... |
| Description |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
85.15K /
5 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BYR29X-800
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| OCR Text |
...see figure 9 ; see figure 7 --6a v fr forward recovery voltage i f =10a; di f /dt = 10 a/s; t j =25c; see figure 10 -5-v
byr29x-800 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all right... |
| Description |
Ultrafast power diode 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220
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| File Size |
124.10K /
12 Page |
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it Online |
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Sanyo
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| Part No. |
2SC4429
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=0.6a VCE=5V, IC=3A 10 8 Conditions Ratings min typ max 10 10 40 Unit A A
* : The hFE1 of the 2SC4429 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
10 K 20 ... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/8A Switching Regulator Applications
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| File Size |
105.91K /
4 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
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| OCR Text |
...State Resistance
(VGS = 10V, 6a)
Ohms A nA Volts
7-2003 050-7002 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
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| File Size |
93.49K /
5 Page |
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it Online |
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