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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S009M-D411 KBE00S009M-D4110
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| OCR Text |
...formed in typical 200 s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16k- bytes block. data in the page can...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~ i/o 7 dat... |
| Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137
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| File Size |
1,908.72K /
86 Page |
 View
it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
KBE00S003M KBE00S003M-D411
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| OCR Text |
...formed in typical 200 s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16k- bytes block. data in the page can...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~ i/o 7 dat... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,809.86K /
86 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
KBE00S009M-D411
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| OCR Text |
...formed in typical 200 s on the 528-bytes and an erase operation can be performed in typical 2ms on a 16k- bytes block. data in the page can...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~ i/o 7 dat... |
| Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
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| File Size |
1,899.39K /
86 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM29N32000IT KM29N32000T
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| OCR Text |
... program operation programs the 528-byte page in typically 250 m s and an erase operation can be performed in typically 2ms on an 8k-byte bl...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~i/o 7 data inputs/ou... |
| Description |
4M x 8 Bit NAND Flash Memory(4M x 8NAND闪速存储器)
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| File Size |
318.27K /
26 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
K9F3208W0A
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| OCR Text |
... program operation programs the 528-byte page in typically 250 m s and an erase operation can be performed in typically 2ms on an 8k-byte bl...outputs. do not leave v cc or v ss disconnected. v ss cle ale we wp n.c n.c n.c n.c n.c n.c n.c n.... |
| Description |
4M x 8Bit NAND Flash Memory Data Sheet
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| File Size |
429.91K /
23 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM29N32000TS
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| OCR Text |
... program operation programs the 528-byte page in typically 250 m s and an erase operation can be performed in typ- ically 2ms on an 8k-byte ...outputs. do not leave v cc or v ss disconnected. pin name pin function i/o 0 ~i/o 7 data inputs/ou... |
| Description |
4M x 8 Bit NAND Flash Memory(4M x 8NAND闪速存储器)
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| File Size |
301.37K /
24 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM29U128T
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| OCR Text |
... program operation programs the 528-byte page in typically 200 m s and an erase operation can be performed in typ- ically 2ms on a 16k-byte ...outputs. do not leave v cc or v ss disconnected. 48-pin tsop1 standard type 12mm x 20mm 1 2 3 4 5 ... |
| Description |
16M x 8 Bit NAND Flash Memory
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| File Size |
484.80K /
26 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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