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				ADPOW[Advanced Power Technology]
Part No.	APT8011 APT8011JFLL
OCR Text	...ts Amps 800 51 204 30 40 690 5.52 -55 to 150 300 51 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...25W, Peak I = 51A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.29K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JFLL
OCR Text	... 800 42 0.140 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 42A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JLL
OCR Text	...s 800 42 0.140 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 42A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.73K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2FLL
OCR Text	... 800 52 0.140 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2LL
OCR Text	...s 800 52 0.140 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...25W, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.58K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018 APT8018L2VR APT8018JN
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5992 rev- 2-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = ...25W, Peak I = 43A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.92K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020B2FLL APT8020LFLL
OCR Text	... OR DV NF A I 38 132 30 40 690 5.52 300 38 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/C C Amps mJ -55 to 150 30...25W, Peak I = 38A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.72K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020B2LL APT8020LLL APT6029BLL APT6029SLL
OCR Text	...ts Amps 800 38 152 30 40 690 5.52 -55 to 150 300 38 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...25W, Peak I = 38A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.99K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020JFLL APT6017JFLL
OCR Text	... 800 33 0.200 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 33A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ number...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.28K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8020JLL
OCR Text	...s 800 33 0.200 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 33A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.75K / 2 Page	View it Online	Download Datasheet

For 5.25w Found Datasheets File :: 3961 Search Time::1ms
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