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Sharp Electrionic
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| Part No. |
S112S02 S116S02
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| OCR Text |
...2S02 / S116S01 / S116S02 VDRM : 400v S212S01 / S212S02 / S216S01 / S216S02 VDRM : 600V 5. Isolation voltage between input and output (Viso :...ms ms ms C/W C/W C/W
T j = 125C, VD = 400v, *6 IF = 8mA VD = 12V, R L= 30 VD = 6V, R L= 30 DC50... |
| Description |
(S112S02 / S116S02) SIP Type SSR
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| File Size |
78.82K /
5 Page |
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IRF[International Rectifier]
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| Part No. |
PVT412AS-T PVT412A PVT412AS
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| OCR Text |
...
Single Pole, Normally Open, 0-400v, 240mA AC / 360mA DC
General Description
The PVT412A Series Photovoltaic Relay is a singlepole, nor...ms ms pF
6 3 2 750 1.0 3.0 0.5 40.0
GENERAL CHARACTERISTICS
Minimum Dielectric Strength, Inpu... |
| Description |
Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-400v, 240mA AC / 360mA DC
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| File Size |
119.64K /
5 Page |
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Microsemi, Corp.
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| Part No. |
APTM50SKM35TG
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| OCR Text |
...ain current v gs = 0v,v ds = 400v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 49.5a 35 39 m...ms 1 ms 100 us 100 ms 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain cur... |
| Description |
30V N-Channel PowerTrench MOSFET 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
282.88K /
6 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDD3N40TM
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| OCR Text |
400v n-channel mosfet february 2007 unifet tm fdd3n40 / fdu3n40 400v n-channel mosfet features ? 2a, 400v, r ds(on) = 3.4 ? @v gs = 10 v ...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t ... |
| Description |
400v N-Channel MOSFET 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| File Size |
724.69K /
9 Page |
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Advanced Power Technolo... ADPOW[Advanced Power Technology]
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| Part No. |
APTM50DDAM65T3
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| OCR Text |
... = 0V,VDS = 500V VGS = 0V,VDS = 400v
Typ
Max 250 1000 65 5 100
Unit V A m V nA
Tj = 25C Tj = 125C 3
VGS = 10V, ID = 25.5A VGS...ms 10 ms
10
1
Single pulse TJ =150C 1
100 ms
0.1 10 100 1000 VDS, Drain to Source Vol... |
| Description |
Dual Boost chopper MOSFET Power Module
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| File Size |
317.12K /
6 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3
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| OCR Text |
...s Qgd Qg
V GS=0V, V DS=0V to 400v
td(on) tr td(off) tf
V DD=380V, V GS=0/10V, ID=11.6A, R G=6.8
-
ns
VDD=400v, ID=11.6A
...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
10 -1
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 m... |
| Description |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
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| File Size |
361.86K /
13 Page |
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NXP Semiconductors N.V.
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| Part No. |
BTA312-600CT
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| OCR Text |
...c; see figure 11 -0.81.5v v d =400v; i t = 0.1 a; t j =150c; see figure 11 0.25 - - v i d off-state current v d =600v; t j = 150 c - 0.4 2...ms v d =400v; t j = 150 c; i t(rms) =12a; dv com /dt = 10 v/s; gate open circuit 13--a/ms v d =400v... |
| Description |
3Q Hi-Com Triac BTA312-600CT<SOT78 (SOT78)|<<http://www.nxp.com/packages/SOT78.html<1<,;
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| File Size |
127.07K /
14 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD02N50C3
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| OCR Text |
...all time
V GS=0V, V DS=0V to 400v
pF
td(on) tr td(off) tf
V DD=350V, V GS=0/10V, ID=1.8A, RG=25
-
ns
Gate Charge Charac...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
C
160
10 -2 0 10
10
1
10
2
TC
10... |
| Description |
for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS& Power Transistor
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| File Size |
264.79K /
11 Page |
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it Online |
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