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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ221
OCR Text	... s m = 80 -10 -3 -1 40 Ta = 25C 0 50 100 Case Temperature TC (C) 150 -0.3 Operation in this Area is Limited by RD...ch-c (t) = S (t) * ch-c ch-c = 1.67C/W, TC = 25C PDM uls e 0.03 h 1S P ot T 100 1m 10 ...
Description	Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
File Size	47.48K / 8 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MCZ14467EG
OCR Text	...12.0 a input current - detect (40% r.h.) i in 9.0 ? ? 1.0 pa internal set voltage low battery sensitivity v low v set 9.0 ? 7.2 47 ? 50 ...ch source and n-ch sink current i d , drain current (ma) 0123456789 1.0 10.0 100.0 1000.0 i d , ...
Description	Low-Power CMOS Ionization Smoke Detector IC 低功耗CMOS集成电路电离烟雾探测
File Size	168.22K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ247
OCR Text	... 1 Ratings -100 20 -8 -32 -8 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source br...ch-c (t) = S (t) * ch-c ch-c = 3.13C/W, TC = 25C PDM PW 1 D = PW T 0.02 0.03 0.01 10 1S 1 lse...
Description	Silicon P-Channel MOS FET
File Size	46.46K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ319 2SJ319L 2SJ319S
OCR Text	... -- -- 1.7 1.7 330 130 25 10 30 40 30 -1.15 180 Max -- -- 10 -100 -4.0 2.3 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ...
Description	Power switching MOSFET Silicon P-Channel MOS FET
File Size	44.83K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ350
OCR Text	... Power vs. Temperature Derating 40 Pch (W) I D (A) -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 0 50 100 150 Tc (C) 200 -2 Maximum Safe Operation Are...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C PDM PW T 0.03 D= PW T 0.01 1...
Description	Silicon P-Channel MOS FET
File Size	46.11K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ387 2SJ387L 2SJ387S
OCR Text	...stg 2 1 Ratings -20 10 -10 -40 -10 20 150 -55 to +150 Unit V V A A A W C C 2 2SJ387(L), 2SJ387(S) Electrical Characteristics (...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C Pu lse PDM PW T 0.03 1s t ho ...
Description	Silicon P-Channel MOS FET
File Size	46.71K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MC9S12DJ256FS
OCR Text	... 25 mhz bus operation at 5v for 40 ns minimum instruction cycle time > opcode compatible with the 68hc11 and 68hc12 > c-optimized architect...ch ., 10-bit pwm 8-ch ., 8-bit/ 4-c h., 16 -bit enhanced cap ture tim er 8 -ch ., 16-bit i n t e...
Description	16-bit Microcontrollers
File Size	75.08K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP6901GSM-HF AP6901GSM-HF-14
OCR Text	...nction temperature 5 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0 v 0 10 20 30 40 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 1...
Description	Simple Drive Requirement, DC-DC Converter Suitable
File Size	86.59K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ471
OCR Text	... -- -- -- Typ -- -- -- -- -- 25 40 20 1700 950 260 20 290 170 130 -1.1 70 Max -- -- -10 10 -2.0 35 60 -- -- -- -- -- -- -- -- -- -- Unit V V...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T D= 0.03 0.01 10 0....
Description	Silicon P Channel DV-L MOS FET High Speed Power Switching
File Size	46.25K / 10 Page	View it Online	Download Datasheet

				Toshiba, Corp.
Part No.	2SK3561
OCR Text	...dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 312 mj avalanche current i ar 8 a repetitive avalanche energy (note 3) e ar 4 mj channel temperature t ch 150 c storage temperature range t s...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI) 东芝场效应晶体管频道马鞍山类型（MOSVI
File Size	224.84K / 6 Page	View it Online	Download Datasheet

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