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  4.5-16v Datasheet PDF File

For 4.5-16v Found Datasheets File :: 12896    Search Time::5.172ms    
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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...witching. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute M...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.08 0.11 11 850 420 110 12 75 125 75 -1.1 70 Max --...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ531 Main Characteristics Power vs. Temperature Derating 40 1000 Maximum...5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Vo...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ532 Main Characteristics Power vs. Temperature Derating 40 Maximum Safe Oper...5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ533 Main Characteristics Power vs. Temperature Derating 40 -1000 Max...5 V Pulse Test -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ534 Main Characteristics Power vs. Temperature Derating 40 1000 Maximum...5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Vo...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ535 Main Characteristics Power vs. Temperature Derating 40 -1000 Max...5 V -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V -20...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ....16 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drai...5 40 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ....11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drai...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ541 Main Characteristics Power vs. Temperature Derating 80 Pch (W) I D (A...5 V -16 -12 -12 Drain Current -8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Volt...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...ode reverse recovery time Note: 4. Pulse test t rr 2 2SJ542 Main Characteristics Power vs. Temperature Derating 80 1000 Maximum...5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 -6 Drain to Source Vo...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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