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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100A13SCG
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| OCR Text |
...-40 -40 3 2 Typ Max 0.10 0.65 0.35 150 125 100 5 3.5 280 Max 1600 8000 1.8 3.0 Unit V A A V nC pF
IF = 40A, VR = 600V di/dt =2000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic Rt... |
| Description |
Phase leg Series & SiC parallel diodes MOSFET Power Module
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| File Size |
280.05K /
7 Page |
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it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APTGT75H120T
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| OCR Text |
...BT Diode
Min
Typ
Max 0.35 0.58 150 125 125 4.7 160
Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 1.5
V C N.m g
Package outline (dimensions i... |
| Description |
Full - Bridge Fast Trench + Field Stop IGBT Power Module
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| File Size |
276.30K /
5 Page |
View
it Online |
Download Datasheet
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DYNEX SEMICONDUCTOR LTD
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| Part No. |
DIM200WHS12-A000
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| OCR Text |
...e resistance 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 collector current, i c - (a) switching energy, e sw - (mj) e on e off e rec t c = 125 ? c, v cc = 600v, r g = 4.7 ohms 0 5 10 15 20 25 30 35 40 45 50 55 41012 gate resistance, ... |
| Description |
200 A, 1200 V, N-CHANNEL IGBT
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| File Size |
166.00K /
8 Page |
View
it Online |
Download Datasheet
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTGT75H120TG
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| OCR Text |
...BT Diode
Min
Typ
Max 0.35 0.58 150 125 125 4.7 160
Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
2500 -40 -40 -40 2.5
V C N.m g
SP4 Package outline (dimensio... |
| Description |
Full - Bridge Fast Trench + Field Stop IGBT Power Module
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| File Size |
254.68K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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