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  3.9a 4.4a Datasheet PDF File

For 3.9a 4.4a Found Datasheets File :: 1643    Search Time::0.969ms    
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    EM32100

ELAN Microelctronics Corp .
EMC[ELAN Microelectronics Corp]
Part No. EM32100
OCR Text ...( typical ) Operating current : 3 A (max.) LCD driver method : 1/3 duty , 1/2 bias. Internal voltage doubler circuit for drive LCD. Internal...9a 8a 10a SEG16 7f 7e 7d SEG8 4b 4g 4c SEG23 10f 10e 10d SEG15 7b 7g 7c SEG7 3f 3e 3d SEG22 10...
Description 8/10 DIGIT LCD DRIVER

File Size 325.09K  /  13 Page

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    IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR
OCR Text ... mJ V/ns C www.irf.com 1 3/15/01 IRF644N/644NS/644NL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS...9A BOTTOM 8.4A TOP RG 20V D .U .T IA S tp 0 .01 + - VD D 180 A 120 Fig 12a. U...
Description 250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直|4A条(丁)|63AB

File Size 122.60K  /  11 Page

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    IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR

IRF[International Rectifier]
Part No. IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TRR
OCR Text ...-8.2 -52 66 0.53 20 194 -8.4 6.3 -5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Paramet...9A BOTTOM -7.8A TOP -20V tp 0.01 300 15V 200 Fig 12a. Unclamped Inductive Test ...
Description -100V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)
HEXFET? Power MOSFET

File Size 212.33K  /  10 Page

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    IRPT1065A

International Rectifier
Part No. IRPT1065A
OCR Text ...z Single-phase rectifier bridge 3-phase, short circuit rated, ultrafast IGBT inverter HEXFRED ultrafast soft recovery freewheeling diodes Br...9A 50kOhms 5% 3.1kOhms 10% 75mOhms 5% 10 s 20A peak CONDITIONS TA = 40C, RthSA = 1.16C/W 10 ms...
Description Power Module for 1 hp Motor Drives

File Size 193.02K  /  12 Page

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    K7Q161862 K7Q161862B K7Q163662B

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7Q161862 K7Q161862B K7Q163662B
OCR Text ...13 VREF NC NC Q15 NC D17 NC TCK 3 NC D9 D10 Q10 Q11 D12 Q13 VDDQ D14 Q14 D15 D16 Q16 Q17 SA 4 W SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDD...9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R 10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D, 3F,2G,3J,...
Description 512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36

File Size 333.83K  /  17 Page

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    LINER[Linear Technology]
Part No. LTC3776 LTC3776EUF LTC3776EGN
OCR Text ...ry (VDDQ and VTT) Supplies VIN 3.3V VIN SENSE1+ SENSE2+ TG1 1.5H SW1 LTC3776 BG1 PGND (VDDQ)VOUT1 2.5V 4A 187k VREF VFB1 470pF 59k 15k ITH1...9A. The TG outputs are held high (off) and the BG outputs low (off) in shutdown. Releasing RUN/SS al...
Description Dual 2-Phase, No RSENSE Synchronous Controller for DDR/QDR Memory Termination

File Size 383.17K  /  28 Page

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    RFD3N08 RFD3N08L RFD3N08LSM FN2836

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. RFD3N08 RFD3N08L RFD3N08LSM FN2836
OCR Text ...d RFD3N08L, RFD3N08LSM 80 80 10 3 Refer to Peak Current Curve 30 0.2 Refer to UIS Curve -55 to 175 300 260 UNITS V V V A W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 3A0V的,0.800欧姆,逻辑层次,N沟道功率MOSFET
From old datasheet system
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs

File Size 68.59K  /  8 Page

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    RFD8P05 RFD8P05SM RFP8P05 FN2384

INTERSIL[Intersil Corporation]
Part No. RFD8P05 RFD8P05SM RFP8P05 FN2384
OCR Text ... .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs
8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs
From old datasheet system

File Size 51.28K  /  6 Page

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    BCR6AM BCR6

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR6AM BCR6
OCR Text ...ons in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 ...9A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- ...
Description MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 80.34K  /  5 Page

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    STMicro
Part No. BTB10CW BTB10BW 2927
OCR Text ...lue Tc = 90 C Tc = 100 C tp = 8.3 ms tp = 10 ms 105 100 50 20 100 - 40 to + 150 - 40 to + 125 260 10 Unit A A I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction te...
Description SNUBBERLESS TRIACS
From old datasheet system

File Size 68.67K  /  5 Page

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