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MURATA MANUFACTURING CO LTD
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| Part No. |
LQH55DN4R7M03L LQH55DN1R0M03L
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| OCR Text |
...choke large current type 4.7 0.3 5.0 0.3 5.0 0.3 5.7 0.3 1.7 min. 1.3 min. 1.3 min. (in mm) chip inductor (chip coil) for choke large ...6ohm 40% 0.8mhz no magnetic shield lqh55dn103m03 p 10000 h 20% 10khz 50ma 140ohm 100ohm 40% 0.5m... |
| Description |
INDUCTOR 2220 4.7UH 20% .05 OHM 2.7A
INDUCTOR, POWER 1.0UH, 4.0A, SMT
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| File Size |
44.44K /
2 Page |
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SamHop Microelectronics
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| Part No. |
STD307S STU307S
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| OCR Text |
...tance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c w 42 a a
downloaded from elcodis.com electro...6ohm total gate charge rise time turn-off delay time v ds =-15v,i d =-25a,v gs =-10v fall time turn-... |
| Description |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
129.52K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STP60L60F
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| OCR Text |
...63 71 162 42 28 19 5 9.6 0.78 1.3 2.8 4 25
stb/p60l60f ver 1.0 www.samhop.com.tw oct,13,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. tr... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
115.46K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STK103
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| OCR Text |
...eristics and maximum ratings nc 3.3 v ds =50v,i d =1.00a,v gs =10v v ds =50v,i d =1.00a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =1a 0.79 1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
97.23K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD417L
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -27.2 t c =70 c w 42 132 g r p p r p p ver 1.1...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-17a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
103.14K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD417S
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| OCR Text |
...tion-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -34.4 t c =70 c w 42 a a 225 green product
s...6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-21.5a,v gs =-10v fall time tur... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
123.08K /
8 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STD616S STU616S
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| OCR Text |
...apacitance on characteristics a 3 v gs =4.5v , i d =6a 77 81 99 m ohm b f=1.0mhz b v sd nc q gs nc q gd 1.88 3.71 gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =8a, v gs =10v drain-source diode characteristics and... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
140.93K /
8 Page |
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it Online |
Download Datasheet |
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