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Advanced Power Technology, Ltd.
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| Part No. |
APTGT150H60TG
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| OCR Text |
...j = 150c 2.6 t j = 25c 3.5 e off turn off energy v ge = 15v v bus = 300v i c = 150a r g = 6.8 ? t j = 150c 5.3 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ ... |
| Description |
Full - Bridge Trench Field Stop IGBT Power Module 桥戴场站IGBT功率模块
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| File Size |
279.78K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Technology, Ltd.
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| Part No. |
APTGT150A170
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| OCR Text |
...http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.14 r t...150a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 10... |
| Description |
Phase leg Trench Field Stop IGBT Power Module 相脚戴场站IGBT功率模块
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| File Size |
266.30K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Technology, Ltd.
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| Part No. |
APT75GP120JDQ3
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| OCR Text |
...ed. min typ max 1200 3 4.5 6 3.3 3.9 3.0 1250 5500 100 the power mos 7 ? igbt is a new genera...150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a v ge = 15v 250s pulse test <0.5 %... |
| Description |
POWER MOS 7 IGBT IGBT的功率MOS 7
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| File Size |
452.31K /
9 Page |
View
it Online |
Download Datasheet
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Microsemi, Corp.
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| Part No. |
APT75GN120J
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| OCR Text |
...des both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, w...150a i c = 75a i c = 37.5a i c = 150a i c = 75a i c = 37.5a
050-7609 rev c 4-2006 apt... |
| Description |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
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| File Size |
286.25K /
6 Page |
View
it Online |
Download Datasheet
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