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Hitachi
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| Part No. |
MBM200GS6AW
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| OCR Text |
...oltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 9,700 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.4 VCC=300V ms Turn On Time ton 0.3 0.6 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=12W (4) 0.6 0.9 VGE=15V Turn Off Time to... |
| Description |
IGBT POWER MODULE
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| File Size |
95.96K /
4 Page |
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it Online |
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ROHM[Rohm]
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| Part No. |
1N4531 1N4148 1N4150 1N4448 1N4531T-72
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| OCR Text |
...@
@
0.1mA 0.25mA
100mA 200mA 250mA
@ 5A 75
@ 100A 100
@150C
trr (ns) VR=6V VR=0 IF=10mA VR (V) f=1MHz RL=100 Cr (pF) 20 4 4
1N4531 1.0 1N4148 0.54 1N4150 0.62 0.62 1N4448 0.72 1.0 0.74 0.86 0.92 1.0 1.0 0.66 0.76 0.8... |
| Description |
Switching diode
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| File Size |
35.73K /
3 Page |
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it Online |
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DIODES[Diodes Incorporated]
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| Part No. |
BAS21T_1 BAS21T BAS21T-7-F BAS21T1
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| OCR Text |
...tion IR = 100mA IF = 100mA IF = 200mA Tj = 25C Tj = 100C VR = 0, f = 1.0MHz IF = IR = 30mA, Irr = 0.1 x IR, RL = 100W
Reverse Current @ Rated DC Blocking Voltage (Note 2) Total Capacitance Reverse Recovery Time
Notes:
3/4 3/4
1. D... |
| Description |
SURFACE MOUNT FAST SWITCHING DIODE
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| File Size |
71.34K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAS78D BAS78 BAS78A BAS78B BAS78C
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| OCR Text |
...0 mA, RL = 100 measured at IR = 200mA
F
t rr t
R = 20 mA
EHN00020
Oscillograph: R = 50, tr = 0.35ns, C 1pF
Aug-20-2001
BAS78A...BAS78D
Forward current IF = f (TS )
Forward current IF = f (V F) TA = 25C
10 1
BAS 7... |
| Description |
Silicon Switching Diodes
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| File Size |
32.74K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAS79D BAS79 BAS79A BAS79B BAS79C
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| OCR Text |
...0 mA, RL = 100 measured at IR = 200mA
F
t rr
t
R = 20 mA
EHN00021
Oscillograph: R = 50, tr = 0.35ns, C 1pF
Aug-20-2001
BAS79A...BAS79D
Forward current IF = f (TS )
Forward current IF = f (V F) TA = 25C
10 1
BA... |
| Description |
Silicon Switching Diodes 硅开关二极管
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| File Size |
32.35K /
3 Page |
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it Online |
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Price and Availability
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