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  2.8ghz Datasheet PDF File

For 2.8ghz Found Datasheets File :: 986    Search Time::1.875ms    
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    MAX2700 MAX2700ECM MAX2700-BMAX2701 MAX2701ECM MAX2700-MAX2701

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2700 MAX2700ECM MAX2700-BMAX2701 MAX2701ECM MAX2700-MAX2701
OCR Text 2.5GHz Direct Downconversion Receivers General Description The MAX2700/MAX2701 are highly integrated direct downconversion (zero-IF) recei...8GHz to 2.5GHz band. The MAX2700/MAX2701s' zero-IF architecture eliminates the need for IF downconve...
Description 1.8GHz to 2.5GHz, Direct-Downconversion Receivers
1.8GHz to 2.5GHz Direct Downconversion Receivers

File Size 325.59K  /  28 Page

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    TY Semicondutor
Part No. BAR50-03W
OCR Text 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max features current-controlled rf resistor for ...8ghz 5 i f =0.5ma,f=100mhz 25 40 i f = 1 ma, f = 100 mhz 16.5 25 i f = 10 ma, f = 100 mhz 3 4.5 i f ...
Description Silicon PIN Diode

File Size 89.46K  /  2 Page

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    CPCI-R6700D CPCI-R6500D CPCI-6930D2428M8G CPCI-6930D2448M12G

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. CPCI-R6700D CPCI-R6500D CPCI-6930D2428M8G CPCI-6930D2448M12G
OCR Text ...ore xeon ? e5-2418l processor 2.0ghz , 10mb llc, tdp 50w passive heatsink chipset intel ? c600 pch memory three channel ddr3-1600 ec...8ghz and 20mb llc up to 48gb ddr3 ecc/reg memory by rdimms two usb 3.0, four gbe ports on fron...
Description Two USB 3.0, four GbE ports on front panel
   Two USB 3.0, four GbE ports on front panel

File Size 526.46K  /  2 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. BFG193
OCR Text ... = 900 mhz ? high gain i s2ie i 2= 13.5 db typ. @vce= 8 v,lc = 30 ma,f = 900 mhz applications ? designed for use in low noise .high-gain amp...8ghz lc= 30ma ; vge= 8v; f= 900mhz lc= 30ma ; vce= 8v; f= 1 ,8ghz lc= 10ma ; vce= 8v; f= 900mhz lc= ...
Description Silicon NPN RF Transistor

File Size 69.49K  /  2 Page

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    LMA110B LMA110

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA110B LMA110
OCR Text ...4"X.064") Chip Thickness : 100m 2 Pad Dimension : 100m .5-8GHz MESFET Amplifier LMA110B Description The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz. This amplifier produces a typi...
Description .5-8GHz MESFET Amplifier

File Size 105.87K  /  4 Page

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    SBFP420B

Sanyo Semicon Device
Part No. SBFP420B
OCR Text ...1e2=17dB typ (f=1.8GHz). 0.35 0.2 Ultrasmall (1006 size), thin (0.5mm) leadless package. 0.05 0.25 [SBFP420B] Side View 3 0.05 4 0.65 0.4 0.25 0.05 2 1 0.05 0.5 Top View 0.6 0.15 0.15 Side View ...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Oscillation Applications
From old datasheet system

File Size 54.12K  /  15 Page

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    BFP181R Q62702-F1685

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181R Q62702-F1685
OCR Text ...n BFP 181R RFs Q62702-F1685 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter vol...8GHz VCE = Parameter 18 dB dB G 20 3V G 14 12 10V 5V 3V 2V 18 2V 16 8 14 1V 12 0...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.01K  /  7 Page

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    BFP181W Q62702-F1501

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181W Q62702-F1501
OCR Text ...n BFP 181W RFs Q62702-F1501 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 20 dB G 18 G 16 14 12 2V 10 8 6 4 1V 10V 5V 3V 0.7V 4 2 0 0 2 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.99K  /  7 Page

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    BFP181 Q62702-F1271

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181 Q62702-F1271
OCR Text ...on BFP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 18 dB dB G 20 3V G 14 12 10V 5V 3V 2V 18 2V 16 8 14 1V 12 0...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 61.12K  /  7 Page

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