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2.7v-3.6v Datasheet PDF File

For 2.7v-3.6v Found Datasheets File :: 26474 Search Time::3.516ms
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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...7V 9 6 VGS = 6V 3 VGS = 4V 0 0 25 50 75 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 125 VGS = 5V IRF2...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...0A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz Avalanche Charact...7V TOP 1000 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP 2.7V 2.7V 1...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ES...7V 100s 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 1 1...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	..., VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of...7V 1 10ms 100ms DC -4 VGS = -6V -2 TC = 25oC TJ = MAX RATED 0.1 1 10 VDS, DRAIN TO SO...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	IRF9540 RF1S9540SM FN2282
OCR Text	...nt On-State Drain Current (Note 2) Gate to Source Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...7V VGS = -6V -30 VGS = -4V -40 -50 1 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIA...
Description	19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
File Size	59.17K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	2 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advance...7V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) -4 PULSE DURATION = 80s DUTY CYCLE = 0.5%...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...Revision No. History 0.0 0.1 0.2 Initial issue. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name i. KM2...7V~3.6V * Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...ee block. Oct. 4th 2000 0.2 Nov. 20th 2000 1. Explain how pointer operation works in detail. 2. For partial page programming into t...7V~3.6V * Organization - Memory Cell Array : (32M + 1024K)bit x 8bit - Data Register : (512 + 16)bit...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				Micrel Semiconductor, Inc. Micrel Semiconductor,Inc. MICREL[Micrel Semiconductor]
Part No.	LM2576-12BU LM2576-3.3BU LM2576-5.0BU LM2576 LM2576-12BT LM2576-3.3BT LM2576-5.0BT LM2576BU LM2576BT
OCR Text	...edback voltage is guaranteed to 2% tolerance for adjustable versions, and the output voltage is guaranteed to 3% for fixed versions, within ...7V-40V Unregulated DC Input +VIN + CIN 100F LM2576-5.0 Output L1 2 100H 3 5 Gnd On/Off D1 1N58...
Description	52kHz Simple 3A Buck Voltage Regulator 7.5 A SWITCHING REGULATOR, 63 kHz SWITCHING FREQ-MAX, PSSO5 52kHz Simple 3A Buck Regulator(固定频率B>52kHz 输出电流 3A 可调转换电压步降稳压 52kHz Simple 3A Buck Voltage Regulator
File Size	88.28K / 8 Page	View it Online	Download Datasheet

For 2.7v-3.6v Found Datasheets File :: 26474 Search Time::3.516ms
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