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  2.6a Datasheet PDF File

For 2.6a Found Datasheets File :: 691    Search Time::1.719ms    
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    IRF[International Rectifier]
Part No. IRF6691
OCR Text ... 12V VGS = -12V VDS = 10V, ID = 26A VDS = 10V VGS = 4.5V ID = 17A See Fig. 17 VDS = 10V, VGS = 0V VDD = 16V, VGS = 4.5VAe mV/C ID = 10mA, reference to 25C ns ID = 26A Clamped Inductive Load VGS = 0V VDS = 10V = 1.0MHz Max. 230 26 ...
Description HEXFET Power MOSFET plus Schottky Diode

File Size 226.24K  /  10 Page

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    IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL

International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
Part No. IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL
OCR Text ...ID = 1mA 0.054 VGS = 10V, ID = 26A 5.0 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(o...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

File Size 132.03K  /  11 Page

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    APT33N90JCU2

Microsemi Corporation
Part No. APT33N90JCU2
OCR Text ...resistance v gs = 10v, i d = 26a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics ...
Description ISOTOP Boost chopper Super Junction MOSFET Power Module

File Size 131.72K  /  5 Page

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    APT33N90JCCU3

Microsemi Corporation
Part No. APT33N90JCCU3
OCR Text ...resistance v gs = 10v, i d = 26a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics ...
Description ISOTOP? Buck chopper Super Junction MOSFET SiC chopper diode

File Size 133.16K  /  5 Page

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    APT33N90JCCU2

Microsemi Corporation
Part No. APT33N90JCCU2
OCR Text ...resistance v gs = 10v, i d = 26a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.5 3 3.5 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics ...
Description ISOTOP? Boost chopper Super Junction MOSFET SiC chopper diode

File Size 133.18K  /  5 Page

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    AP4435GH-HF AP4435GJ-HF AP4435GJ-HF-14 AP4435GH-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP4435GH-HF AP4435GJ-HF AP4435GJ-HF-14 AP4435GH-HF-14
OCR Text ...-resistance 2 v gs =-10v, i d =-26a - - 20 m ? v gs =-4.5v, i d =-16a - - 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-26a - 31 - s i dss drain-source leakage curr...
Description Simple Drive Requirement, Lower On-resistance

File Size 97.54K  /  4 Page

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    IRHE7110 IRHE8110

International Rectifier
Part No. IRHE7110 IRHE8110
OCR Text ...ons A V nS C Tj = 25C, IS = 26A, VGS = 0V Tj = 25C, IF = 26A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junc...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET

File Size 278.76K  /  12 Page

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    International Rectifier, Corp.
Part No. JANSF2N7269
OCR Text ...50 100k rads (si) 0.10 w 26a jansr2n7269 irhm3250 300k rads (si) 0.10 w 26a jansf2n7269 irhm4250 600k rads (si) 0.10 w 26a jansg2n7269 irhm8250 1000k rads (si) 0.10 w 26a jansh2n7269 features: n single event...
Description 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 20000kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装

File Size 271.96K  /  12 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
Part No. FRK9260R FRK9260D FRK9260H
OCR Text 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-204AE Features * 26A, -200V, RDS(on) = 0.200 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) ...
Description 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs 26 A, 200 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
26A/ -200V/ 0.200 Ohm/ Rad Hard/ P-Channel Power MOSFETs

File Size 47.17K  /  6 Page

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    IRHM8150 IRHM7150 IRHM4150 JANSF2N7268 JANSG2N7268 JANSH2N7268 IRHM3150 JANSR2N7268

IRF[International Rectifier]
Part No. IRHM8150 IRHM7150 IRHM4150 JANSF2N7268 JANSG2N7268 JANSH2N7268 IRHM3150 JANSR2N7268
OCR Text ... 1 s Duty Factor 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% Fig 25. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Th...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 441.47K  /  12 Page

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