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First Components Intern...
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| Part No. |
IRF640FP
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| OCR Text |
...s , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 10a) * r ds(on) 0.18 drain-source on-voltage (v gs = 10 v) (i d = 5.0 a) v ds(on) 6.0 v forward transconductance (v ds ... |
| Description |
IRF640FP 18A 200V N CHANNEL POWER MOSFET
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| File Size |
162.58K /
5 Page |
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First Components Intern...
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| Part No. |
IRF640
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| OCR Text |
...s , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 10a) * r ds(on) 0.18 drain-source on-voltage (v gs = 10 v) (i d = 5.0 a) v ds(on) 6.0 v forward transconductance (v ds ... |
| Description |
18A 200V N CHANNEL POWER MOSFET
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| File Size |
147.59K /
5 Page |
View
it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
VNQ690SPTR-E
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| OCR Text |
...rcuit. figure 1. package table 2. order codes note: (**) see application schematic at page 9 typ e r ds(on) i out v cc vnq690sp-e 90m w (...38mh; r l =0 w ; v bat =13.5v; t jstart =150oc; i l =14a) 53 mj t j junction operating temperature -... |
| Description |
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
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| File Size |
275.00K /
20 Page |
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it Online |
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Microsemi
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| Part No. |
APT10086BVRG
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| OCR Text |
2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate vo...38mh, r g = 25 , peak i l = 13a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reser... |
| Description |
MOSFET
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| File Size |
52.13K /
4 Page |
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it Online |
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