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  2 5v 512k x 36 zbt synchronous Datasheet PDF File

For 2 5v 512k x 36 zbt synchronous Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Elite Semiconductor Memory Technology, Inc.
Part No. M12S64322A-7BG
Description 512K x 32 Bit x 4 Banks synchronous DRAM 2M x 32 synchronous DRAM, 6 ns, PBGA90

File Size 744.94K  /  46 Page

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    Elite Semiconductor Memory Technology, Inc.
Part No. M52D16161A-10TG
Description 512K x 16Bit x 2Banks synchronous DRAM 1M x 16 synchronous DRAM, 9 ns, PDSO50

File Size 766.68K  /  29 Page

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    HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-7 HY57V653220BTC-8
Description 4 Banks x 512K x 32Bit synchronous DRAM 2M x 32 synchronous DRAM, 6 ns, PDSO86

File Size 152.09K  /  12 Page

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    Integrated Device Technology, Inc.
Part No. IDT71V67802150BQI IDT71V67802150BG IDT71V67602150PF IDT71V67602150BQ IDT71V67602166PFI IDT71V67802133BG IDT71V67802133BQ
Description 256K x 36, 512K x 18 3.3V synchronous SRAMs 2.5v I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5vI / O的脉冲计数器输出流水线,单周期取
256K x 36/ 512K x 18 3.3V synchronous SRAMs 2.5v I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect

File Size 517.49K  /  23 Page

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC CY7C1380C-167AI CY7C1380C-167BGC CY7C1380C-167BZI CY7C1380C-133AC CY7C1380C-225AC CY7C1380C-167BGI CY7C1380C-250AC CY7C1380C-250BZC CY7C1382C-225BZC CY7C1382C-250BZC CY7C1380C-225BZC CY7C1382C-167AC CY7C1382C-167BZI
Description Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M x 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M x 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K x 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K x 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K x 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K x 36 CACHE SRAM, 3.4 ns, PQFP100

File Size 442.13K  /  36 Page

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    GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS8160F32T-8.5I GS8160F18T-8.5I

GSI Technology
Part No. GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS8160F32T-8.5I GS8160F18T-8.5I
Description 6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM

File Size 515.42K  /  25 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
Description LED ORANGE DIFFUSED 2x5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2x5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2x5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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    IDT
Part No. IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT71T75902S80PFI
Description 2.5v 1M x 18 zbt synchronous 2.5v I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5v synchronous zbt? SRAMs 2.5v I/O, Burst Counter Flow-Through Outputs

File Size 386.84K  /  26 Page

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    GSI Technology, Inc.
Part No. GS881E36AD-150 GS881E36AT-225I GS881E36AT-225T GS881E18AD-150T GS881E18AD-250IT GS881E18AD-250T GS881E36AD-133IT GS881E36AD-200IT GS881E32AD-250I GS881E32AD-250IT GS881E36AT-166I GS881E18AD-133
Description 512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 36 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 36 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 512K x 18 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 512K x 18 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 36 CACHE SRAM, 8.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 36 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 32 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 256K x 36 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 36 9Mb synchronous Burst SRAMs 512K x 18 CACHE SRAM, 8.5 ns, PBGA165

File Size 658.65K  /  37 Page

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    HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY57V643220CT-55 HY57V643220CT-6 HY57V643220CT-7 HY57V643220CT-8 HY57V643

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIx[Hynix Semiconductor]
Part No. HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY57V643220CT-55 HY57V643220CT-6 HY57V643220CT-7 HY57V643220CT-8 HY57V643220CT-P HY57V643220CT-S HY57V643220CLT-7 HY57V643220CLT-8 HY57V643220CLT-P HY57V643220CLT-S HY57V643220CLT-47 HY57V643220CLT-5 HY57V643220CLT-55 HY57V643220CLT-6
Description 4 Banks x 512K x 32Bit synchronous DRAM 2M x 32 synchronous DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit synchronous DRAM 2M x 32 synchronous DRAM, 5.5 ns, PDSO86

File Size 181.08K  /  12 Page

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