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  18.0a Datasheet PDF File

For 18.0a Found Datasheets File :: 659    Search Time::3.047ms    
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    MICROSEMI[Microsemi Corporation]
Part No. APTGF90H60TG
OCR Text ...Pulse Test < 0.5% Duty cycle Ic=180A On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 140 120 100 80 60 40 20 0 -50 -25 0 ...
Description Full - Bridge NPT IGBT Power Module

File Size 285.85K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APTGF90SK60TG
OCR Text ...Pulse Test < 0.5% Duty cycle Ic=180A VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Tempera...
Description Buck chopper NPT IGBT Power Module

File Size 306.02K  /  6 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTGF90SK60TG
OCR Text ...Pulse Test < 0.5% Duty cycle Ic=180A On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 140 120 100 80 60 40 20 0 -50 -25 0 ...
Description Buck chopper NPT IGBT Power Module

File Size 284.03K  /  6 Page

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    APTM20DAM08TG

Microsemi Corporation
Part No. APTM20DAM08TG
OCR Text ...x 500 750 Unit V A A IF = 180A IF = 360A IF = 180A IF = 180A VR = 133V di/dt = 600A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 180 1.1 1.4 0.9 31 60 180 750 1.15 V July, 2006 2-6 APTM20DAM08TG - Rev 4 trr Rever...
Description Boost chopper MOSFET Power Module

File Size 281.67K  /  6 Page

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    IXFN360N15T2

IXYS Corporation
Part No. IXFN360N15T2
OCR Text ...S = 10V, VDS = 0.5 * VDSS, ID = 180A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 140 230 47.5 3060 665 50 ...
Description GigaMOSTrenchT2 HiperFET Power MOSFET

File Size 173.49K  /  6 Page

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    CT30VM-8

Renesas Electronics Corporation
Part No. CT30VM-8
OCR Text .................................. 180A q GATE w COLLECTOR e EMITTER r COLLECTOR e TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25C) Parameter Collector-emitter voltage Gate-emi...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

File Size 46.66K  /  3 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTGF90TA60PG
OCR Text ...Pulse Test < 0.5% Duty cycle Ic=180A On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature 140 120 100 80 60 40 20 0 -50 -25 0 ...
Description Triple phase leg NPT IGBT Power Module

File Size 284.41K  /  6 Page

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    FGA180N33AT

Fairchild Semiconductor
Part No. FGA180N33AT
OCR Text 180A PDP Trench IGBT April 2008 FGA180N33AT 330V, 180A PDP Trench IGBT Features * High Current Capability * Low saturation voltage: VCE(sat) =1.03V @ IC = 40A * High input impedance * RoHS compliant tm General Description Us...
Description Discrete IGBT
330V, 180A PDP Trench IGBT
   330V, 180A PDP Trench IGBT

File Size 563.21K  /  8 Page

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    IPB180N06S4-H1

Infineon Technologies AG
Part No. IPB180N06S4-H1
OCR Text ... I F=100A, T j=25C V R=30V, I F=180A, di F/dt =100A/s 0.6 0.95 180 720 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=180A, V GS=0 to 10V 84 22.5 208 5.0 110 45 270 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=180A, R ...
Description OptiMOS-T2 Power-Transistor

File Size 173.79K  /  9 Page

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    APTGF90SK60T1G

Microsemi Corporation
Part No. APTGF90SK60T1G
OCR Text ...Pulse Test < 0.5% Duty cycle Ic=180A VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature Ic=4...
Description Buck chopper NPT IGBT Power Module

File Size 311.48K  /  6 Page

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For 18.0a Found Datasheets File :: 659    Search Time::3.047ms    
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