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  16mh Datasheet PDF File

For 16mh Found Datasheets File :: 118    Search Time::0.797ms    
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    MC33982BPNAR2

Freescale Semiconductor, Inc
Part No. MC33982BPNAR2
OCR Text ... using single-pulse method (L = 16mh, RL = 0, VPWR = 12V, TJ = 150C). 4. ESD1 testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100pF, RZAP = 1500); ESD3 testing is performed in accordance with the Charge Device Mod...
Description Single Intelligent High-current Self-protected Silicon High Side Switch (2.0m ohm)

File Size 605.69K  /  35 Page

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    HIRF730

Hi-Sincerity Mocroelectronics
Part No. HIRF730
OCR Text ...*2: VDD=50V, starting Tj=25C, L=16mh, RG=25, IAS=5.5A *3: ISD5.5A, di/dt90A/us, VDDV(BR)DSS, TJ150C HIRF730, HIRF730F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25C, unless otherwise ...
Description N-CHANNEL POWER MOSFET

File Size 77.79K  /  4 Page

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    Schaffner EMC, Inc.
Part No. RD5122-6-9M6 RD7137-36-0M5 RD8137-36-1M5 RD6137-10-4M5 RD7137-10-6M6 RD7137-16-2M8 RD8137-16-5M0 RD8137-25-2M5 RD7137-25-1M3 RD6137-16-1M5 RD8137-64-0M5 RD8137-50-0M6 RD7127-36-1M0 RD8147-50-0M3 RD5122-10-6M0 RD7127-10-14M0 RD8127-25-5M0 RD5132-10-3M0 RD5132-16-1M0 RD7147-36-0M2 RD8147-36-0M8 RD7147-10-3M5 RD6127-10-9M0 RD7127-25-2M8 RD8147-25-1M3
OCR Text ...uring frequency: 1kHz; 500A > 0.16mh > 1.6mH; 50A > 1.6mH < 160mH Inductance tolerance: +50%, -30% Resistance tolerance: max. 15% @ 25C; 200m, 100mA Electrical characteristics @ 25C: 2C > Components > RD series Typical choke attenuat...
Description
File Size 555.27K  /  4 Page

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    CET
Part No. CEB10N4 CEF10N4 CEP10N4
OCR Text ...t to production testing. d.L =9.16mh, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5.6A . 4 - 51 CEP10N4/...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 85.05K  /  4 Page

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    WFF640

Wisdom technologies Int`l
Part No. WFF640
OCR Text ...m junction temperature 2. L = 1.16mh, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp...
Description N-Channel MOSFET

File Size 850.93K  /  7 Page

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    IRF7N1405

International Rectifier
Part No. IRF7N1405
OCR Text ...= 25 V, Starting TJ = 25C, L= 0.16mh Peak IAS = 55A, VGS = 10V, RG= 25 ISD 55A, di/dt 220A/s, Pulse width 300 s; Duty Cycle 2% VDD 55V, TJ 150C Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS:...
Description 55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
HEXFET-R POWER MOSFET SURFACE MOUNT (SMD-1)

File Size 134.97K  /  7 Page

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    SML60B25

SemeLAB
Seme LAB
Part No. SML60B25
OCR Text ...re. 2) Starting TJ = 25C, L = 4.16mh, RG = 25W, Peak IL = 25A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 SML60B25 STATIC ELECTRICAL RATI...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.13K  /  2 Page

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    IRF6628PBF IRF6628TRPBF

International Rectifier
Part No. IRF6628PBF IRF6628TRPBF
OCR Text ...ture. Starting TJ = 25C, L = 0.16mh, RG = 25, IAS = 22A. www.irf.com 1 07/11/06 IRF6628PbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr ...
Description DIRECTFET POWER MOSFET

File Size 266.06K  /  9 Page

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    HFW640 HFI640

SemiHow Co.,Ltd.
Part No. HFW640 HFI640
OCR Text ...um junction temperature 2. l=1.16mh, i as =18a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 18a, di/dt300a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of ...
Description 200V N-Channel MOSFET

File Size 710.74K  /  8 Page

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